公开(公告)号：US12132297B2

公开(公告)日：2024-10-29

申请号：US17294446

申请日：2018-09-25

申请人： Shenzhen Raysees AI Technology Co. Ltd.

发明人： Yang Wang ,  Yongxiang He

IPC分类号： H01S5/00 ,  H01S5/0225 ,  H01S5/0234 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01S5/02345

CPC分类号： H01S5/423 ,  H01S5/0225 ,  H01S5/0234 ,  H01S5/04256 ,  H01S5/18361 ,  H01S5/02345 ,  H01S5/42

摘要： The present invention discloses a VCSEL array that can function in at least two different operational modes. In one operational mode, the VCSEL array functions as a regular-patterned array; and in the other operational mode, the VCSEL array functions as an irregular-patterned array. Thus, the same VCSEL chip may be used as an illumination light source or a structural light method light source for 3D sensing, depending on the selected operational mode.

公开(公告)号：US20240348008A1

公开(公告)日：2024-10-17

申请号：US18335937

申请日：2023-06-15

申请人： Lumentum Operations LLC

发明人： Siu Kwan CHEUNG ,  Lijun ZHU ,  Matthew Glenn PETERS ,  Jacob U. LOPEZ RUVALCABA

IPC分类号： H01S5/042 ,  H01S5/02315 ,  H01S5/0234 ,  H01S5/183 ,  H01S5/42 ,  H05K1/02

CPC分类号： H01S5/04256 ,  H01S5/02315 ,  H01S5/0234 ,  H01S5/18305 ,  H01S5/423 ,  H05K1/0218

摘要： In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate and a plurality of VCSELs on the substrate. The VCSEL device may include an anode layer on the substrate and electrically connected to the plurality of VCSELs. The VCSEL device may include a cathode electrode over at least a portion of one or more VCSELs, of the plurality of VCSELs, and electrically connected to the one or more VCSELs. The VCSEL device may include a ground layer electrically isolated from the at least one anode layer and the cathode electrode by one or more isolation layers, wherein the ground layer is on the anode layer and the cathode electrode, between the anode layer and the cathode electrode, or underneath the anode layer.

公开(公告)号：US20240332903A1

公开(公告)日：2024-10-03

申请号：US18671499

申请日：2024-05-22

申请人： Sony Corporation

发明人： Tatsushi HAMAGUCHI ,  Jugo MITOMO ,  Hiroshi NAKAJIMA ,  Masamichi ITO ,  Susumu SATO

IPC分类号： H01S5/183 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/18327 ,  H01S5/0207 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2022 ,  H01S5/2219 ,  H01S5/34333 ,  H01S5/04253 ,  H01S5/04256 ,  H01S2301/176 ,  H01S2304/12

摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

公开(公告)号：US12100935B2

公开(公告)日：2024-09-24

申请号：US17170834

申请日：2021-02-08

申请人： Changchun Institute of Optics, fine Mechanics and Physics, Chinese Academy of Sciences

发明人： Gunter Larisch ,  Sicong Tian ,  Dieter Bimberg

IPC分类号： H01S5/183 ,  H01L33/00 ,  H01S5/042 ,  H01S5/42

CPC分类号： H01S5/18327 ,  H01L33/005 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/423 ,  H01S5/04256 ,  H01S5/04257

摘要： A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.

公开(公告)号：US20240313504A1

公开(公告)日：2024-09-19

申请号：US18597378

申请日：2024-03-06

申请人： Haoqian Liu ,  Xiaobo Liu ,  Zhilong Liu

发明人： Haoqian Liu ,  Xiaobo Liu ,  Zhilong Liu

IPC分类号： H01S5/042 ,  H01S5/42

CPC分类号： H01S5/04256 ,  H01S5/423

摘要： This utility model discloses a laser light source for aiming device, comprising a laser chip. The top layer of the laser chip is equipped with a light source set, which comprises at least two laser light sources. The laser chip is equipped with an electrode laminate connected to an electrode of the laser light source at the bottom layer and the laser chip is further equipped with an electrode terminal set at the top layer. The electrode terminal set comprises several electrode terminals, the electrode terminal corresponds to the laser light source one to one, and the other electrode of each laser light source is connected to the corresponding electrode terminal. This utility model aims to overcome the shortcomings of exiting technology and provide a laser light source for aiming device in a wider range of scenarios.

公开(公告)号：US20240283222A1

公开(公告)日：2024-08-22

申请号：US18635025

申请日：2024-04-15

申请人： Panasonic Holdings Corporation

发明人： TAKAYUKI KAI ,  HIROSHI OHNO ,  KOUJI OOMORI

IPC分类号： H01S5/40 ,  B23K26/064 ,  H01S5/023 ,  H01S5/042 ,  H01S5/14

CPC分类号： H01S5/4012 ,  B23K26/064 ,  H01S5/023 ,  H01S5/04256 ,  H01S5/143 ,  H01S5/4031 ,  H01S2301/18

摘要： A light emitting device includes a first laser diode including a plurality of emitters that emit first laser beams, a second laser diode including a plurality of emitters that emit second laser beams, the second laser diode being different from the first laser diode, a first beam twister unit provided to correspond to the first laser diode, and a second beam twister unit provided to correspond to the second laser diode, the second twister unit being different from the first beam twister unit.

公开(公告)号：US12068575B2

公开(公告)日：2024-08-20

申请号：US17241584

申请日：2021-04-27

申请人： PHOSERTEK CORPORATION

发明人： Yu-Chen Chen ,  Chien-Hung Lin ,  Bo-Tsun Chou ,  Chih-Yuan Weng ,  Kuo-Jui Lin

IPC分类号： H01S5/026 ,  H01S5/042 ,  H01S5/11 ,  H01S5/183 ,  H01S5/343

CPC分类号： H01S5/026 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/18361 ,  H01S5/343

摘要： A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

公开(公告)号：US20240170917A1

公开(公告)日：2024-05-23

申请号：US18281791

申请日：2022-03-04

申请人： Sumitomo Electric Industries, Ltd. ,  Kyoto University

发明人： Naoki FUJIWARA ,  Naoya KONO ,  Akira FURUYA ,  Yuki ITO ,  Susumu NODA ,  Takuya INOUE ,  Kenji ISHIZAKI

IPC分类号： H01S5/11 ,  H01S5/042 ,  H01S5/062 ,  H01S5/18 ,  H01S5/20

CPC分类号： H01S5/11 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/06226 ,  H01S5/18 ,  H01S5/2086

摘要： A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the first region. A refractive index of each of the second regions is different from that of the first region. The light emitting region includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.

公开(公告)号：US11990561B2

公开(公告)日：2024-05-21

申请号：US17219109

申请日：2021-03-31

申请人： NUVOTON TECHNOLOGY CORPORATION JAPAN

发明人： Noboru Inoue ,  Shinji Yoshida

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01S5/04256 ,  H01S5/34333 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm−3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

公开(公告)号：US11984701B2

公开(公告)日：2024-05-14

申请号：US17408745

申请日：2021-08-23

申请人： Palo Alto Research Center Incorporated

发明人： Joerg Martini ,  Sourobh Raychaudhuri ,  Christopher Chua ,  David K. Biegelsen ,  Joseph Lee

IPC分类号： H01S5/042 ,  B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  H01S5/40 ,  H01S5/42

CPC分类号： H01S5/04256 ,  B41J2/442 ,  B41J2/45 ,  B41J2/455 ,  H01S5/042 ,  H01S5/4025 ,  H01S5/423

摘要： A computer adapted to convert images into raw data can provide the raw data to a control interface adapted to transmit the raw data with timing information to an electronic driver circuit. The electronic driver circuit can convert the raw data with the timing information provided by a control interface into regulated current signals provided to the semiconductor laser array at 300 dpi and higher. The semiconductor array can convert the current signals into light to illuminate an imaging member. The laser array can comprise vertical cavity surface emitting lasers providing imaging greater than 300 dpi. Each semiconductor laser can operate at 50 mW or greater.