摘要:
The invention refers to a tunnel typed coking furnace with a movable sliding bed and the method using the same belonging to the coking field, comprising a furnace body (48), a front sealing door (7), a back sealing door (25), a branch flue (10), a bottom flue (12) and a main flue (6), comprising a first preparation chamber (3) for coaling, a preheating segment (50), a carbonization segment (51), a coke dry quenching segment (52), and a second preparation chamber (23) for coke outlet; each part has different formation from the others, and are interconnected in series with the others; the sliding bed (37) for coaling and tamping coal material (44) passes through the abovementioned five segment in series in order to coke. The invention may realize a production coal material with fixed formation through formation process with pressure, so as to obtain the coke product with the same and big size, in addition to high strength, high utilization rate of heat energy, high degree of mechanization, and it also may realize the clean exhaustion of flue, so as to be able to protect the environment and water resource, and realize clean production.
摘要:
The method provides for use of sensitized photocatalyst for the photocatalytic reduction of CO2 under visible light illumination. The photosensitized catalyst is comprised of a wide band gap semiconductor material, a transition metal co-catalyst, and a semiconductor sensitizer. The semiconductor sensitizer is photoexcited by visible light and forms a Type II band alignment with the wide band gap semiconductor material. The wide band gap semiconductor material and the semiconductor sensitizer may be a plurality of particles, and the particle diameters may be selected to accomplish desired band widths and optimize charge injection under visible light illumination by utilizing quantum size effects. In a particular embodiment, CO2 is reduced under visible light illumination using a CdSe/Pt/TiO2 sensitized photocatalyst with H2O as a hydrogen source.
摘要:
The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 1018/cm3, a bandgap of at least 2 eV, and an electronic conductivity of at least 101 S/cm, where parameters are specified at a temperature of 25° C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In2O3, Nb-doped TiO2, and F-doped SnO2.