摘要:
Roughly described, a method for mask data preparation is described, for use with a preliminary mask layout that includes a starting polygon, the vertices of the starting polygon including I-points (vertices of the starting polygon having an interior angle greater than 90 degrees), including steps of developing a rectilinear partition tree on at least the I-points of the starting polygon, and using the edges of the partition tree to define the partition of the starting polygon into sub-polygons for mask writing.
摘要:
Roughly described, a method for mask data preparation is described, for use with a preliminary mask layout that includes a starting polygon, the vertices of the starting polygon including I-points (vertices of the starting polygon having an interior angle greater than 90 degrees), including steps of developing a rectilinear partition tree on at least the I-points of the starting polygon, and using the edges of the partition tree to define the partition of the starting polygon into sub-polygons for mask writing.
摘要:
Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.
摘要:
Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.
摘要:
Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.
摘要:
Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.
摘要:
Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.
摘要:
One embodiment of the present invention provides a system that predicts a manufacturing yield of a chip. During operation, the system first receives a chip layout. Next, the system identifies hotspots within the chip layout, wherein a hotspot is a location within the chip layout wherein a yield-indicative variable value falls in a low manufacturable range. The system then obtains yield scores for the hotspots, wherein a yield score indicates a failure probability for a corresponding hotspot. Next, the system predicts the manufacturing yield for the chip based on the hotspots and the yield scores for the hotspots.
摘要:
One embodiment of the present invention provides a system that predicts manufacturing yield for a die within a semiconductor wafer. During operation, the system first receives a physical layout of the die. Next, the system partitions the die into an array of tiles. The system then computes systematic variations for a quality indicative value to describe a process parameter across the array of tiles based on the physical layout of the die. Next, the system applies a random variation for the quality indicative parameter to each tile in the array of tiles. Finally, the system obtains the manufacturing yield for the die based on both the systematic variations and the random variations.
摘要:
One embodiment of the present invention provides a system that predicts a manufacturing yield of a chip. During operation, the system first receives a chip layout. Next, the system identifies hotspots within the chip layout, wherein a hotspot is a location within the chip layout wherein a yield-indicative variable value falls in a low manufacturable range. The system then obtains yield scores for the hotspots, wherein a yield score indicates a failure probability for a corresponding hotspot. Next, the system predicts the manufacturing yield for the chip based on the hotspots and the yield scores for the hotspots.