公开(公告)号：US20210102310A1

公开(公告)日：2021-04-08

申请号：US17062033

申请日：2020-10-02

Applicant: Raytheon Technologies Corporation

Inventor： Ryan C. Breneman ,  Dilip M. Shah ,  Steven J. Bullied ,  Shiela R. Woodard

IPC: C30B21/02 ,  C30B29/52 ,  C22C19/05 ,  B22D27/04

Abstract: A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve

公开(公告)号：US20210101206A1

公开(公告)日：2021-04-08

申请号：US17062035

申请日：2020-10-02

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Shiela R. Woodard ,  Steven J. Bullied ,  Ryan C. Breneman

IPC: B22D27/04 ,  B22D21/02 ,  C30B11/14

Abstract: A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

公开(公告)号：US20210101205A1

公开(公告)日：2021-04-08

申请号：US17062031

申请日：2020-10-02

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Steven J. Bullied ,  Ryan C. Breneman ,  Shiela R. Woodard ,  Carl R. Verner

IPC: B22D27/04 ,  C30B29/52 ,  C30B11/14

Abstract: A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.

公开(公告)号：US12005493B2

公开(公告)日：2024-06-11

申请号：US17829786

申请日：2022-06-01

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Steven J. Bullied ,  Ryan C. Breneman ,  Shiela R. Woodard ,  Carl R. Verner

IPC: B22D27/04 ,  C30B11/14 ,  C30B29/52

CPC classification number: B22D27/04 ,  B22D27/045 ,  C30B11/14 ,  C30B29/52

Abstract: A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.

公开(公告)号：US11198175B2

公开(公告)日：2021-12-14

申请号：US17062035

申请日：2020-10-02

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Shiela R. Woodard ,  Steven J. Bullied ,  Ryan C. Breneman

IPC: B22D27/04 ,  C30B11/14 ,  B22D21/02

Abstract: A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

公开(公告)号：US20220325434A1

公开(公告)日：2022-10-13

申请号：US17845260

申请日：2022-06-21

Applicant: Raytheon Technologies Corporation

Inventor： Ryan C. Breneman ,  Dilip M. Shah ,  Steven J. Bullied ,  Shiela R. Woodard

IPC: C30B21/02 ,  B22D27/04 ,  C22C19/05 ,  C30B29/52

Abstract: A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

公开(公告)号：US20220288674A1

公开(公告)日：2022-09-15

申请号：US17829786

申请日：2022-06-01

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Steven J. Bullied ,  Ryan C. Breneman ,  Shiela R. Woodard ,  Carl R. Verner

IPC: B22D27/04 ,  C30B11/14 ,  C30B29/52

Abstract: A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.

公开(公告)号：US20210324499A1

公开(公告)日：2021-10-21

申请号：US17327189

申请日：2021-05-21

Applicant: RAYTHEON TECHNOLOGIES CORPORATION

Inventor： Mario P. Bochiechio ,  Shiela R. Woodard ,  Sara Ann Beck ,  Andrew L. Haynes

IPC: C22C19/05

Abstract: An alloy that may include nickel, aluminum from 4.8 wt. % to 5.15 wt. %; cobalt from 18 wt. % to 19 wt. %, chromium from 11.9 wt. % to 12.9 wt. %, molybdenum from 2.8 wt. % to 3.6 wt. %, and niobium from 0.05 wt. % to 0.1 wt. %. The alloy may further include tungsten from 0.05 wt. % to 0.1 wt. %. The alloy may further include tantalum from 0.05 wt. % to 0.1 wt. %.

公开(公告)号：US12123104B2

公开(公告)日：2024-10-22

申请号：US17845260

申请日：2022-06-21

Applicant: Raytheon Technologies Corporation

Inventor： Ryan C. Breneman ,  Dilip M. Shah ,  Steven J. Bullied ,  Shiela R. Woodard

IPC: B22D27/04 ,  C22C19/05 ,  C30B21/02 ,  C30B29/52

CPC classification number: C30B21/02 ,  B22D27/045 ,  C22C19/056 ,  C22C19/057 ,  C30B29/52

Abstract: A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

公开(公告)号：US11806780B2

公开(公告)日：2023-11-07

申请号：US17490399

申请日：2021-09-30

Applicant: Raytheon Technologies Corporation

Inventor： Dilip M. Shah ,  Shiela R. Woodard ,  Steven J. Bullied ,  Ryan C. Breneman

IPC: B22D27/04 ,  C30B11/14 ,  B22D21/02

CPC classification number: B22D27/045 ,  B22D21/025 ,  C30B11/14

Abstract: A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.