公开(公告)号：US3686080A

公开(公告)日：1972-08-22

申请号：US3686080D

申请日：1971-07-21

Applicant: RCA CORP

Inventor： BANFIELD JOSEPH HENRY ,  HUSNI SALEEM YNES ,  GREIG WILLIAM JOHN

IPC: H01L23/532 ,  H01L29/45 ,  C23B5/48 ,  B44D1/18

CPC classification number: H01L23/53242 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

Abstract: IN THE FABRICATION OF CERTAIN TYPES OF SEMICONDUCTOR DEVICES, A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH SUCCESSIVE LAYERS OF A FIRST LAYER OF TITANIUM, A SECOND LAYER OF A MEMBER OF THE PLATINUM GROUP OF METALS, AND A THIRD LAYER OF TITANIUM, THE LAYERS PREFERABLY BEING PROVIDED IN A PROTETIVE ATMOSPHERE. PORTIONS OF THE UPPERMOST LAYER OF TITANIUM ARE SELECTIVELY ETCHED TO EXPOSED PORTIONS OF THE SECOND LAYER. THE EXPOSED PORTIONS OF THE SECOND LAYER ARE THEN IMMEDIATELY ETCHED AWAY, THE REMAINING PORTIONS OF THE UPPERMOST TITANIUM LAYER SERVING AS AN ETCH MASK IN THE PROCESS. THE PORTIONS OF THE BOTTOM LAYER OF TITANIUM EXPOSED BY THE ETCHING OF THE SECOND LAYER ARE COATED WITH AN ELECTRICALLY NON-CONDUCTIVE COATING, OTHER PORTIONS OF THE SECOND LAYER ARE EXPOSED BY REMOVAL OF THE OVERCOATING OF TITANIUM THEREFROM, AND GOLD IS IMMEDIATELY THEREAFTER PLATED ONTO THE NEWLY EXPOSED SECOND LAYER PORTIONS.