-
公开(公告)号：US3686080A
公开(公告)日：1972-08-22
申请号：US3686080D
申请日：1971-07-21
Applicant: RCA CORP
Inventor： BANFIELD JOSEPH HENRY , HUSNI SALEEM YNES , GREIG WILLIAM JOHN
IPC: H01L23/532 , H01L29/45 , C23B5/48 , B44D1/18
CPC classification number: H01L23/53242 , H01L29/456 , H01L2924/0002 , H01L2924/00
Abstract: IN THE FABRICATION OF CERTAIN TYPES OF SEMICONDUCTOR DEVICES, A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH SUCCESSIVE LAYERS OF A FIRST LAYER OF TITANIUM, A SECOND LAYER OF A MEMBER OF THE PLATINUM GROUP OF METALS, AND A THIRD LAYER OF TITANIUM, THE LAYERS PREFERABLY BEING PROVIDED IN A PROTETIVE ATMOSPHERE. PORTIONS OF THE UPPERMOST LAYER OF TITANIUM ARE SELECTIVELY ETCHED TO EXPOSED PORTIONS OF THE SECOND LAYER. THE EXPOSED PORTIONS OF THE SECOND LAYER ARE THEN IMMEDIATELY ETCHED AWAY, THE REMAINING PORTIONS OF THE UPPERMOST TITANIUM LAYER SERVING AS AN ETCH MASK IN THE PROCESS. THE PORTIONS OF THE BOTTOM LAYER OF TITANIUM EXPOSED BY THE ETCHING OF THE SECOND LAYER ARE COATED WITH AN ELECTRICALLY NON-CONDUCTIVE COATING, OTHER PORTIONS OF THE SECOND LAYER ARE EXPOSED BY REMOVAL OF THE OVERCOATING OF TITANIUM THEREFROM, AND GOLD IS IMMEDIATELY THEREAFTER PLATED ONTO THE NEWLY EXPOSED SECOND LAYER PORTIONS.
-
2.发明授权
公开(公告)号：US3640812A
公开(公告)日：1972-02-08
申请号：US3640812D
申请日：1970-09-02
Applicant: RCA CORP
Inventor： VOSSEN JOHN LOUIS JR , BANFIELD JOSEPH HENRY
CPC classification number: C23C14/3464 , H01L21/00
Abstract: The semiconductor device and a metal backing plate are simultaneously sputter etched so that some of the backing plate metal is back scattered onto the device and forms a thin metalsemiconductor alloy region in the semiconductor contact openings. At least one layer of electrode metal is then deposited on the device surface and the alloy regions. Part of the metal layer is then removed to define the desired electrode leads.
Abstract translation: 半导体器件和金属背板被同时溅射蚀刻，使得一些背板金属反向散射到器件上，并在半导体接触开口中形成薄的金属 - 半导体合金区域。 然后在器件表面和合金区域上沉积至少一层电极金属。 然后去除金属层的一部分以限定所需的电极引线。
-
Search Results
2
records
(took 0.008 seconds)
