公开(公告)号：US3897627A

公开(公告)日：1975-08-05

申请号：US48408474

申请日：1974-06-28

Applicant: RCA CORP

Inventor： KLATSKIN JEROME BARNARD

IPC: H01L21/301 ,  H01L21/308 ,  H01L21/329 ,  H01L23/36 ,  H01L27/10 ,  B01J17/00

CPC classification number: H01L29/6609 ,  H01L21/308 ,  H01L23/36 ,  H01L27/10 ,  H01L2924/0002 ,  Y10S438/928 ,  H01L2924/00

Abstract: A metal film is deposited on one side of a wafer of semiconductor material. A plurality of device regions are formed on the metal film by intersecting strips of a masking material. A layer of metal is plated on the metal film within each device region. The other side of the semiconductor wafer is selectively etched down to the metal film to form an array of semiconductor devices, each device being positioned within the boundaries of a corresponding device region. The devices are then separated from the array by fracturing the metal film along the strips of masking material.

Abstract translation: 金属膜沉积在半导体材料晶片的一侧。 通过与掩模材料的条相交，在金属膜上形成多个器件区域。 在每个器件区域内的金属膜上镀一层金属。 半导体晶片的另一侧被选择性地蚀刻到金属膜上以形成半导体器件的阵列，每个器件位于对应的器件区域的边界内。 然后通过沿着掩模材料的条破碎金属膜将器件与阵列分离。