公开(公告)号：US3735482A

公开(公告)日：1973-05-29

申请号：US3735482D

申请日：1971-06-16

Applicant: RCA CORP

Inventor： NORRIS P ,  MICHELETTI F

IPC: H01L21/316 ,  H01L29/00 ,  B01J17/00

CPC classification number: H01L21/31687 ,  H01L29/00

Abstract: A method of making an MOS transistor which has a gate insulator layer composed of aluminum oxide made by plasma anodizing a thin layer of aluminum, in which the thin aluminum layer and the anodized layer are not defined by etching. The gate electrode insulator layer is formed by depositing a thin layer of aluminum over the entire surface of the device after the source and drain contacts are made and then converting the entire aluminum layer to aluminum oxide.

Abstract translation: 一种制造MOS晶体管的方法，其具有由氧化铝构成的栅极绝缘体层，其通过等离子体阳极氧化铝薄层，其中薄铝层和阳极氧化层不通过蚀刻来限定。 在形成源极和漏极接触之后，通过在器件的整个表面上沉积薄的铝层，然后将整个铝层转化为氧化铝来形成栅电极绝缘体层。