Method of forming region of a desired conductivity type in the surface of a semiconductor body
    1.
    发明授权
    Method of forming region of a desired conductivity type in the surface of a semiconductor body 失效
    在半导体体表面形成所需导电类型的区域的方法

    公开(公告)号:US3762968A

    公开(公告)日:1973-10-02

    申请号:US3762968D

    申请日:1971-04-07

    Applicant: RCA CORP

    Inventor: KRESSEL H NELSON H

    CPC classification number: H01L21/2258 Y10S252/95 Y10S438/912

    Abstract: A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium arsenide containing a relatively high concentration of aluminum. The aluminum gallium arsenide layer has therein a desired conductivity modifier. The coated body is heated to diffuse the conductivity modifier from the layer into the body to form a region of a desired conductivity along the surface of the body. At least a portion of the layer is etched away with an etchant which does not attack the material of the body, such as boiling hydrochloric acid, to expose at least a portion of the surface of the body.

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