Abstract:
A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium arsenide containing a relatively high concentration of aluminum. The aluminum gallium arsenide layer has therein a desired conductivity modifier. The coated body is heated to diffuse the conductivity modifier from the layer into the body to form a region of a desired conductivity along the surface of the body. At least a portion of the layer is etched away with an etchant which does not attack the material of the body, such as boiling hydrochloric acid, to expose at least a portion of the surface of the body.