公开(公告)号：US3649881A

公开(公告)日：1972-03-14

申请号：US3649881D

申请日：1970-08-31

Applicant: RCA CORP

Inventor： CHANG KERN KO NAN ,  PRAGER HANS JOHN

IPC: H01L23/36 ,  H01L25/03 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/36 ,  H01L24/33 ,  H01L25/03 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12043 ,  H01L2924/00

Abstract: A high-power semiconductor device assembly wherein a plurality of semiconductor diodes are mounted between opposed, spaced, parallel surfaces of two flat bodies of electrical insulating and good heat conducting material. The opposed surfaces of the bodies have metal films thereon to which the diodes are electrically and mechanically secured. The metal films are arranged to electrically connect the diodes in series. Heat generated in the diodes is conducted through the metal films to the bodies which dissipate the heat to the surrounding ambient.

Abstract translation: 一种大功率半导体器件组件，其中多个半导体二极管安装在电绝缘和良好导热材料的两个扁平体的相对的间隔的平行表面之间。 主体的相对表面上具有金属膜，二极管电气和机械地固定在其上。 金属膜被布置成串联电连接二极管。 在二极管中产生的热量通过金属膜传导到将热量散发到周围环境的物体。

公开(公告)号：US3926693A

公开(公告)日：1975-12-16

申请号：US46476574

申请日：1974-04-29

Applicant: RCA CORP

Inventor： KAWAMOTO HIROHISA ,  PRAGER HANS JOHN ,  RISKO JOHN JOSEPH

IPC: H01L29/00 ,  H01L29/864 ,  H01L21/20 ,  H01L21/225 ,  H01L29/90

CPC classification number: H01L29/00 ,  H01L29/864 ,  Y10S148/003 ,  Y10S148/067 ,  Y10S148/151 ,  Y10S438/928 ,  Y10S438/936

Abstract: A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first outer conductivity region. The first outer conductivity region is of the same conductivity type as the n-type region but of a higher doping concentration. Contiguous to the p-type region is a second outer conductivity region. The second outer conductivity region is of the same conductivity type as the ptype region but of higher doping concentration. The p-type region and the n-type region are the active regions of the Trapatt diode and have a graded doping concentration. In addition, the active regions are in close proximity to a surface of the diode which is generally mounted in contact with a heat sink. The graded doping concentration and close proximity of the active regions to a heat sink results in a Trapatt diode with good thermal dissipation characteristics, increased power output, and a broader bandwidth.

公开(公告)号：US3588735A

公开(公告)日：1971-06-28

申请号：US3588735D

申请日：1969-06-05

Applicant: RCA CORP

Inventor： CHANG KERN K N ,  PRAGER HANS JOHN ,  WEISBROD SHERMAN

IPC: H03F3/10 ,  H03B7/14

CPC classification number: H03F3/10

Abstract: AN AVALANCHE DIODE IN COOPERATIVE RELATIONSHIP WITH A UHF OR L BAND WAVE TUNING STRUCTURE AMPLIFIERS LOW POWER OSCILLATIONS AT A FREQUENCY IN THE UHF OR L BAND APPLIED TO THE WAVE TUNING STRUCTURE, IF THE AVALANCHE DIODE IS BIASED WITH A BIAS LEVEL SLIGHTLY BELOW THE THRESHOLD VALUE AT WHICH FREE RUNNING OSCILLATIONS TAKE PLACE.