公开(公告)号：US20190378785A1

公开(公告)日：2019-12-12

申请号：US16410768

申请日：2019-05-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kuniharu MUTO ,  Hideyuki NISHIKAWA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/18 ,  H01L25/00 ,  H01L23/544

Abstract: Assembly of the semiconductor device includes the following steps: (a) mounting a semiconductor chip on the bottom electrode 40; (b) mounting the top electrode 30 on the semiconductor chip; (c) forming a sealing body 70 made of resin and provided with a convex portion 74 so as to cover the semiconductor chip; and (d) exposing the electrode surface 31 of the top electrode 30 on the top surface of the sealing body 70 and exposing the electrode surface 41 of the bottom electrode 40 on the back surface of the sealing body 70. In the step (d), at least one of the electrode surface 31 and the electrode surface 41 is exposed from the sealing body 70 by irradiating at least one of the front surface and the back surface of the sealing body 70 with the laser 110.