公开(公告)号：US20240136352A1

公开(公告)日：2024-04-25

申请号：US18452834

申请日：2023-08-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Natsumi IKEDA ,  Tohru KAWAI

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/823462 ,  H01L21/823475 ,  H01L28/20 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/66492 ,  H01L29/7833

Abstract: A semiconductor device including an oscillation circuit includes a MISFET having a halo region formed on a semiconductor substrate and a plurality of MISFETs having no halo regions formed on the semiconductor substrate. Gate electrodes of the plurality of MISFETs having no halo regions are electrically connected to each other. The plurality of MISFETs having no halo regions is used in a pair transistor included in the oscillation circuit.

公开(公告)号：US20240234413A9

公开(公告)日：2024-07-11

申请号：US18452834

申请日：2023-08-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Natsumi IKEDA ,  Tohru KAWAI

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/823462 ,  H01L21/823475 ,  H01L28/20 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/66492 ,  H01L29/7833

Abstract: A semiconductor device including an oscillation circuit includes a MISFET having a halo region formed on a semiconductor substrate and a plurality of MISFETs having no halo regions formed on the semiconductor substrate. Gate electrodes of the plurality of MISFETs having no halo regions are electrically connected to each other. The plurality of MISFETs having no halo regions is used in a pair transistor included in the oscillation circuit.