公开(公告)号：US20240164112A1

公开(公告)日：2024-05-16

申请号：US18054981

申请日：2022-11-14

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Ryo OGURA ,  Takahiro MARUYAMA

IPC分类号： H01L27/11592 ,  H01L27/1159

CPC分类号： H01L27/11592 ,  H01L27/1159

摘要： This is a manufacturing method of a semiconductor device having a first region, a second region, and a third region. A second gate dielectric film is formed on a semiconductor substrate in the second region. A thin first gate dielectric film is formed on the semiconductor substrate in the first region. A protective film is formed on the first gate dielectric film and on the second gate dielectric film. A thin paraelectric film is formed on the semiconductor substrate in the third region. An amorphous film formed of a material including a metal oxide and a first element is formed on the protective film and on the paraelectric film. A metal film is formed on the amorphous film. By performing a heat treatment, the amorphous film is crystallized to form a ferroelectric film.