公开(公告)号：US20240234262A9

公开(公告)日：2024-07-11

申请号：US18452845

申请日：2023-08-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Junichi NITA ,  Seiji HIRABAYASHI

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49548 ,  H01L21/4828 ,  H01L21/4842

Abstract: A common lead frame can be used for both a first package and a second package and has a planar shape according to specifications of each of a first chip used in the first package and a second chip used in the second package, and a thickness of at least a part of a lead portion through which any one of a first cutting line corresponding to an outer peripheral side of the first package and a second cutting line corresponding to an outer peripheral side of the second package passes is smaller than a thickness of a lead portion through which the first cutting line and the second cutting line do not pass.

公开(公告)号：US20240136258A1

公开(公告)日：2024-04-25

申请号：US18452845

申请日：2023-08-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Junichi NITA ,  Seiji HIRABAYASHI

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49548 ,  H01L21/4828 ,  H01L21/4842

Abstract: A common lead frame can be used for both a first package and a second package and has a planar shape according to specifications of each of a first chip used in the first package and a second chip used in the second package, and a thickness of at least a part of a lead portion through which any one of a first cutting line corresponding to an outer peripheral side of the first package and a second cutting line corresponding to an outer peripheral side of the second package passes is smaller than a thickness of a lead portion through which the first cutting line and the second cutting line do not pass.

公开(公告)号：US20230290879A1

公开(公告)日：2023-09-14

申请号：US18065091

申请日：2022-12-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Seiji HIRABAYASHI ,  Yusuke OJIMA

IPC: H01L29/78 ,  H01L25/07 ,  H01L29/40

CPC classification number: H01L29/7815 ,  H01L25/074 ,  H01L29/407 ,  H01L29/7813

Abstract: A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved. A main MOSFET including a gate electrode and a field plate electrode inside a second trench and a sensing MOSFET for electric-current detection including a gate electrode and a field plate electrode inside a fourth trench are surrounded by different termination rings, respectively.