公开(公告)号：US20230245941A1

公开(公告)日：2023-08-03

申请号：US18057326

申请日：2022-11-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takashi AOKI ,  Takehiro UEDA

IPC: H01L23/31 ,  H01L21/02

CPC classification number: H01L23/3192 ,  H01L23/3171 ,  H01L21/022

Abstract: A semiconductor device includes an aluminum layer, a passivation film, and a protective film arranged between the aluminum layer and the passivation film. A plurality of aluminum regions are formed in the aluminum layer. A width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the protective film 140. The gap is filled with the protective film 140.