公开(公告)号：US20230027022A1

公开(公告)日：2023-01-26

申请号：US17828376

申请日：2022-05-31

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takehirou MARIKO ,  Yasuhiro OKAMOTO ,  Senichirou NAGASE

IPC: H01L23/544 ,  H01L29/06 ,  H01L29/78 ,  H01L21/66 ,  H01L21/304 ,  H01L21/78

Abstract: In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.