公开(公告)号：US20240304680A1

公开(公告)日：2024-09-12

申请号：US18437947

申请日：2024-02-09

Applicant: Renesas Electronics Corporation

Inventor： Takahiro MARUYAMA ,  Tomoki AYANO ,  Yuya ABIKO

IPC: H01L29/40 ,  H01L29/423

CPC classification number: H01L29/401 ,  H01L29/407 ,  H01L29/4236

Abstract: A field plate electrode is formed in an inside of a trench via a first insulating film. Another part of the field plate electrode is selectively removed such that part of the field plate electrode is left as a lead portion. After the first insulating film is recessed, a protective film is formed on the first insulating film. A gate insulating film is formed in the inside of the trench, and a second insulating film is formed so as to cover the field plate electrode. A conductive film is formed on the gate insulating, second insulating film and protective films. A gate electrode is formed on the field plate electrode by removing the conductive film located in an outside of the trench. At this time, the conductive film formed on each of the protective film and the second insulating film, which are in contact with the lead portion, is removed.

公开(公告)号：US20240079458A1

公开(公告)日：2024-03-07

申请号：US18322989

申请日：2023-05-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoki AYANO ,  Takahiro MARUYAMA ,  Yuya ABIKO

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/401 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813

Abstract: A trench is formed in a semiconductor substrate. An insulating film is formed in the trench and on an upper surface of the semiconductor substrate. An ion implantation is performed to the insulating film. An etching treatment is performed to the insulating film, thereby a thickness of the insulating film is reduced. A conductive film is formed in the trench via the insulating film. In plan view, the trench extends in a Y-direction. The above-described ion implantation is performed from a direction inclined by a predetermined angle from an extending direction of a normal line with respect to the upper surface of the semiconductor substrate.