公开(公告)号：US20130180560A1

公开(公告)日：2013-07-18

申请号：US13725046

申请日：2012-12-21

Applicant: RESEARCH TRIANGLE INSTITUTE

Inventor： Rama VENKATASUBRAMANIAN ,  Phillip BARLETTA ,  Bryson QUILLIAMS ,  Geza DEZSI ,  Thomas COLPITTS ,  Gary BULMAN ,  Judy STUART

IPC: H01L35/28 ,  H01L35/18 ,  H01L35/22 ,  H01L35/16

CPC classification number: H01L35/28 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/32

Abstract: A thermoelectric structure including a thermoelectric material having a thickness less than 50 nm and a semi-insulating material in electrical contact with the thermoelectric material. The thermoelectric material and the semi-insulating materials have an equilibrium Fermi level, across a junction between the thermoelectric material and the semi-insulating material, which exists in a conduction band or a valence band of the thermoelectric material. The thermoelectric structure is for thermoelectric cooling and thermoelectric power generation.

Abstract translation: 包括厚度小于50nm的热电材料和与该热电材料电接触的半绝缘材料的热电结构。 热电材料和半绝缘材料在热电材料和半绝缘材料之间的接合处具有平衡的费米能级，其存在于热电材料的导带或价带中。 热电结构用于热电冷却和热电发电。