公开(公告)号：US20170104055A1

公开(公告)日：2017-04-13

申请号：US14880759

申请日：2015-10-12

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian Moser

IPC: H01L49/02 ,  H01L23/528 ,  H01L23/522 ,  H01L21/66

CPC classification number: H01L28/60 ,  H01G4/255 ,  H01G4/306 ,  H01L22/20 ,  H01L22/22 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L28/87

Abstract: A method of making a capacitor with reduced variance comprises providing a bottom plate in a first metal layer, a first dielectric material over the bottom plate, and a middle plate in a second metal layer to form a first capacitor. The method also comprises measuring the capacitance of the first capacitor, and determining whether to couple none, one, or both of a second capacitor and a third capacitor in parallel with the first capacitor. The method may further comprise the steps of providing a second dielectric material over the middle plate, and providing a first top plate and a second top plate in a third metal layer to form the second capacitor, and a third capacitor. Electrical connections may be formed to couple one or both of the second capacitor and the third capacitor in parallel with the first capacitor based on the measured value of the first capacitor.

公开(公告)号：US09673271B2

公开(公告)日：2017-06-06

申请号：US14880759

申请日：2015-10-12

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian Moser

IPC: H01L21/66 ,  H01L49/02 ,  H01L23/528 ,  H01L23/522 ,  H01G4/30

CPC classification number: H01L28/60 ,  H01G4/255 ,  H01G4/306 ,  H01L22/20 ,  H01L22/22 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L28/87

Abstract: A method of making a capacitor with reduced variance comprises providing a bottom plate in a first metal layer, a first dielectric material over the bottom plate, and a middle plate in a second metal layer to form a first capacitor. The method also comprises measuring the capacitance of the first capacitor, and determining whether to couple none, one, or both of a second capacitor and a third capacitor in parallel with the first capacitor. The method may further comprise the steps of providing a second dielectric material over the middle plate, and providing a first top plate and a second top plate in a third metal layer to form the second capacitor, and a third capacitor. Electrical connections may be formed to couple one or both of the second capacitor and the third capacitor in parallel with the first capacitor based on the measured value of the first capacitor.