公开(公告)号：US09502328B2

公开(公告)日：2016-11-22

申请号：US14529870

申请日：2014-10-31

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  David M. Shuttleworth ,  Michael J. Antonell

IPC: H01L23/373 ,  H01L27/12 ,  H01L23/48

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

公开(公告)号：US09548258B2

公开(公告)日：2017-01-17

申请号：US14529870

申请日：2014-10-31

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  David M. Shuttleworth ,  Michael J. Antonell

IPC: H01L23/373 ,  H01L27/12 ,  H01L23/48

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

公开(公告)号：US09583414B2

公开(公告)日：2017-02-28

申请号：US14529870

申请日：2014-10-31

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  David M. Shuttleworth ,  Michael J. Antonell

IPC: H01L23/373 ,  H01L27/12 ,  H01L23/48

CPC classification number: H01L23/3737 ,  H01L21/0237 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/485 ,  H01L27/1203 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

Abstract translation: 公开了一种不产生归因于与掩埋氧化物（BOX）层的电介质区域连接的高电阻率硅手柄的非线性的半导体器件。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构，其中第二表面与半导体堆叠结构相对于第一表面。 至少一个器件端子包括在半导体堆叠结构中，并且至少一个电触头从第二表面延伸并且电耦合到至少一个器件端子。 半导体堆叠由设置在半导体堆叠的第一表面上的聚合物保护。 聚合物具有高导热性和高电阻率。

公开(公告)号：US20150115416A1

公开(公告)日：2015-04-30

申请号：US14529870

申请日：2014-10-31

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  David M. Shuttleworth ,  Michael J. Antonell

IPC: H01L29/02 ,  H01L23/373 ,  H01L21/02

CPC classification number: H01L23/3737 ,  H01L21/0237 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/485 ,  H01L27/1203 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.

Abstract translation: 公开了一种不产生归因于与掩埋氧化物（BOX）层的电介质区域连接的高电阻率硅手柄的非线性的半导体器件。 半导体器件包括具有第一表面和第二表面的半导体堆叠结构，其中第二表面与半导体堆叠结构相对于第一表面。 至少一个器件端子包括在半导体堆叠结构中，并且至少一个电触头从第二表面延伸并且电耦合到至少一个器件端子。 半导体堆叠由设置在半导体堆叠的第一表面上的聚合物保护。 聚合物具有高导热性和高电阻率。