公开(公告)号：US10381998B2

公开(公告)日：2019-08-13

申请号：US15087423

申请日：2016-03-31

申请人： RF Micro Devices, Inc.

发明人： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC分类号： H03H3/10 ,  H03H3/02 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  H03H9/02

摘要： A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.

公开(公告)号：US20170033756A1

公开(公告)日：2017-02-02

申请号：US15087423

申请日：2016-03-31

申请人： RF Micro Devices, Inc.

发明人： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC分类号： H03H3/10 ,  H03H9/54 ,  H03H9/145 ,  H03H9/25 ,  H03H9/17 ,  H03H3/02 ,  H03H9/64

CPC分类号： H03H3/02 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02952 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/6406 ,  Y10T29/42

摘要： A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.

摘要翻译： 在硅中制造具有低载流子寿命的接合晶片的方法包括提供具有相对的顶表面和底表面的硅衬底，修改硅衬底的顶部以相对于载流子寿命在顶部部分中降低载流子寿命 硅基板，除了顶部之外，将具有相对的顶表面和底表面的压电层在硅衬底的顶表面上分开一段距离T的压电层，并且提供一对电极，其具有数字上分散在顶表面上的指状物 的压电层，电极包括表面声波（SAW）装置的一部分。 修改和粘合步骤可以以任何顺序进行。 硅衬底的改进的顶部防止在SAW器件的操作期间在该部分内产生寄生电导。

公开(公告)号：US20170033764A1

公开(公告)日：2017-02-02

申请号：US15087225

申请日：2016-03-31

申请人： RF Micro Devices, Inc.

发明人： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC分类号： H03H9/02

摘要： A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces, the structure of the silicon in a top portion of the silicon substrate having been modified to reduce the carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. Modification of the top portion of the silicon substrate prevents the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.

摘要翻译： 在硅中具有低载流子寿命的接合晶片包括具有相对的顶表面和底表面的硅衬底，硅衬底的顶部中的硅的结构已经被修改以降低顶部相对于载流子寿命的载流子寿命 在除了顶部之外的硅衬底的部分中; 压电层，其结合在所述硅衬底的顶表面上并且具有相隔的距离T的顶表面和底表面; 以及具有以相同电极的相邻指状物之间的中心到中心距离D的图案相互数字间分散在压电层的顶表面上的指状物的一对电极，电极包括表面声学的一部分 波（SAW）装置。 硅衬底的顶部的修改防止在SAW器件的操作期间在硅衬底的顶部部分内产生寄生电导。