公开(公告)号：US09761678B2

公开(公告)日：2017-09-12

申请号：US13655659

申请日：2012-10-19

Applicant: RF Micro Devices, Inc.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/737 ,  H01L29/08 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

公开(公告)号：US20130099287A1

公开(公告)日：2013-04-25

申请号：US13655659

申请日：2012-10-19

Applicant: RF MICRO DEVICES, INC.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Abstract translation: 公开了半导体结构的实施例以及形成半导体结构的方法。 在一个实施例中，半导体结构包括半导体衬底，形成在半导体衬底上的集电极层，形成在半导体衬底上的基极层和形成在半导体衬底上的发射极层。 半导体衬底由砷化镓（GaAs）形成，而基底层由氮化镓氮化镓锑化镓（GaInNASSb）化合物形成。 由GaInNASSb化合物形成的基底层具有低带隙，但是基本上与由GaAs形成的下面的半导体衬底的晶格常数匹配的晶格。 以这种方式，可以使用半导体结构形成具有较低基极电阻，导通电压和/或偏移电压的半导体器件。