公开(公告)号：US20150372098A1

公开(公告)日：2015-12-24

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/205 ,  H01L29/10 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。

公开(公告)号：US20150102389A1

公开(公告)日：2015-04-16

申请号：US14051998

申请日：2013-10-11

Applicant: RF Micro Devices, Inc.

Inventor： Brian G. Moser ,  Robert Saxer ,  Jing Zhang

IPC: H01L29/737 ,  H01L29/10

CPC classification number: H01L29/7371 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/42304

Abstract: A heterojunction bipolar transistor includes a base mesa, an emitter assembly formed over the base mesa, and a base contact. The emitter assembly includes multiple circular sectors. Each circular sector is spaced apart from one another such that a sector gap is formed between radial sides of adjacent circular sectors. The base contact, which is formed over the base mesa, has a central portion and multiple radial members. Each radial member extends outward from the central portion of the base contact along a corresponding sector gap. As such, each of the circular sectors of the emitter assembly is separated by a radial member of the base contact. The number of circular sectors may vary from one embodiment to another. For example, the emitter assembly may have three, four, six, or more circular sectors.

Abstract translation: 异质结双极晶体管包括基底台面，形成在基台面上的发射体组件和基底触点。 发射器组件包括多个圆形扇形。 每个圆形扇形体彼此间隔开，使得在相邻圆形扇形体的径向侧面之间形成扇形间隙。 形成在基台面上的基部接触件具有中心部分和多个径向部件。 每个径向构件沿着对应的扇形间隙从基座的中心部分向外延伸。 因此，发射器组件的每个圆形扇区由基部触点的径向构件分开。 圆形扇区的数量可以从一个实施例变化到另一个实施例。 例如，发射器组件可以具有三个，四个，六个或更多个圆形扇形。

公开(公告)号：US09502510B2

公开(公告)日：2016-11-22

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/737 ,  H01L29/08

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。

公开(公告)号：US20130099287A1

公开(公告)日：2013-04-25

申请号：US13655659

申请日：2012-10-19

Applicant: RF MICRO DEVICES, INC.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Abstract translation: 公开了半导体结构的实施例以及形成半导体结构的方法。 在一个实施例中，半导体结构包括半导体衬底，形成在半导体衬底上的集电极层，形成在半导体衬底上的基极层和形成在半导体衬底上的发射极层。 半导体衬底由砷化镓（GaAs）形成，而基底层由氮化镓氮化镓锑化镓（GaInNASSb）化合物形成。 由GaInNASSb化合物形成的基底层具有低带隙，但是基本上与由GaAs形成的下面的半导体衬底的晶格常数匹配的晶格。 以这种方式，可以使用半导体结构形成具有较低基极电阻，导通电压和/或偏移电压的半导体器件。

公开(公告)号：US09761678B2

公开(公告)日：2017-09-12

申请号：US13655659

申请日：2012-10-19

Applicant: RF Micro Devices, Inc.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/737 ,  H01L29/08 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

公开(公告)号：US20160293700A1

公开(公告)日：2016-10-06

申请号：US15083566

申请日：2016-03-29

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers

IPC: H01L29/08 ,  H01L29/737

CPC classification number: H01L29/7371 ,  H01L29/0821 ,  H01L29/205

Abstract: A transistor includes a sub-collector, a base, a collector between the sub-collector and the base, and an emitter on the base opposite the collector. The collector includes a first region adjacent to the base and a second region between the first region and the sub-collector. The first region has a graduated doping profile such that a doping concentration of the first region decreases in proportion to a distance from the base. The second region has a substantially constant doping profile. By providing the collector with a doping profile as described, the linearity of the transistor is significantly improved while maintaining the radio frequency (RF) gain thereof.

Abstract translation: 晶体管包括副集电极，基极，子集电极和基极之间的集电极，以及与集电极相对的基极上的发射极。 收集器包括与基底相邻的第一区域和位于第一区域和副收集器之间的第二区域。 第一区域具有渐变掺杂分布，使得第一区域的掺杂浓度与距离基极的距离成比例地减小。 第二区域具有基本恒定的掺杂分布。 通过向集电极提供如上所述的掺杂分布，在保持其射频（RF）增益的同时，晶体管的线性明显改善。

公开(公告)号：US08994075B1

公开(公告)日：2015-03-31

申请号：US14051998

申请日：2013-10-11

Applicant: RF Micro Devices, Inc.

Inventor： Brian G. Moser ,  Robert Saxer ,  Jing Zhang

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/737 ,  H01L29/10

CPC classification number: H01L29/7371 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/42304

Abstract: A heterojunction bipolar transistor includes a base mesa, an emitter assembly formed over the base mesa, and a base contact. The emitter assembly includes multiple circular sectors. Each circular sector is spaced apart from one another such that a sector gap is formed between radial sides of adjacent circular sectors. The base contact, which is formed over the base mesa, has a central portion and multiple radial members. Each radial member extends outward from the central portion of the base contact along a corresponding sector gap. As such, each of the circular sectors of the emitter assembly is separated by a radial member of the base contact. The number of circular sectors may vary from one embodiment to another. For example, the emitter assembly may have three, four, six, or more circular sectors.

Abstract translation: 异质结双极晶体管包括基底台面，形成在基台面上的发射体组件和基底触点。 发射器组件包括多个圆形扇形。 每个圆形扇形体彼此间隔开，使得在相邻圆形扇形体的径向侧面之间形成扇形间隙。 形成在基台面上的基部接触件具有中心部分和多个径向部件。 每个径向构件沿着对应的扇形间隙从基座的中心部分向外延伸。 因此，发射器组件的每个圆形扇区由基部触点的径向构件分开。 圆形扇区的数量可以从一个实施例变化到另一个实施例。 例如，发射器组件可以具有三个，四个，六个或更多个圆形扇形。