公开(公告)号：US20190304969A1

公开(公告)日：2019-10-03

申请号：US16357962

申请日：2019-03-19

Applicant: ROHM CO., LTD.

Inventor： Akihiko TSUBAKI ,  Kanako DEGUCHI

IPC: H01L27/06 ,  H01L27/02 ,  H01L49/02 ,  H01L29/732 ,  H01L29/861

Abstract: The present disclosure provides a semiconductor device that prevents a resistor component connected in series with a base electrode from the electrostatic damage. A semiconductor device includes, a collector layer, which is a first conductivity type semiconductor, a base layer, which is a second conductivity type semiconductor and connected with the collector layer, an emitter layer, which is the first conductivity type semiconductor and connected with the base layer, a first electrode, electrically connected to the base layer, a first resistor component, connected in series with the first electrode in a conductive path connecting the first electrode and the base layer, a second electrode, electrically connected to the emitter layer and the first resistor component; and a protection component, connected to the first electrode in parallel with the first resistor component, wherein the protection component comprises a pair of diodes formed by a pn junction and by a way of making both ends of the conductive path into a same polarity.