公开(公告)号：US20240087942A1

公开(公告)日：2024-03-14

申请号：US18512025

申请日：2023-11-17

Applicant: ROHM CO., LTD.

Inventor： Ryosuke YAMADA ,  Yuichi NAKAO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6836 ,  H01L21/67132 ,  H01L21/68721 ,  H01L2221/68327

Abstract: A method for processing a semiconductor wafer comprises: preparing a semiconductor wafer including a main body and a rim, the rim having a greater thickness than the main body and including a projection projecting; supporting the semiconductor wafer with a holding tape; preparing a base including a stage and an outer portion; setting the semiconductor wafer on the base so that the main body is supported by a support surface of the stage; and separating the main body and the rim by cutting an edge portion of the main body in a state in which the main body is supported by the stage. The setting the semiconductor wafer on the base includes setting the semiconductor wafer on the base so that the main body is supported by the stage in a state in which the projection is separated from a head surface of the outer portion of the base.