公开(公告)号：US20150214259A1

公开(公告)日：2015-07-30

申请号：US14659673

申请日：2015-03-17

Applicant: ROHM CO., LTD.

Inventor： Takamitsu YAMANAKA ,  Goro NAKATANI ,  Osamu MATSUSHIMA ,  Kenichi MIYAZAKI

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/1461 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%.

Abstract translation: 根据本发明的光电转换器包括绝缘层，相互间隔并设置在绝缘层上的多个下电极，由黄铜矿化合物半导体制成并形成为一起覆盖多个下电极的光吸收层， 以及形成为覆盖光吸收层的透明导电膜。 由此消除了由于光吸收层的蚀刻引起的影响（损伤）的像素之间的灵敏度的变化，并且可以使像素开口率为100％。