公开(公告)号：US20230264474A1

公开(公告)日：2023-08-24

申请号：US18003713

申请日：2021-07-06

Applicant: ROHM CO., LTD.

Inventor： Eitaro KUROKAWA ,  Osamu MATSUSHIMA ,  Noriyuki SHIMOJI ,  Tatsuya SUZUKI ,  Daisuke NOTSU

IPC: B41J2/14 ,  H10N30/20 ,  H10N30/87 ,  H10N30/88 ,  H10N30/082 ,  B41J2/16

CPC classification number: B41J2/14233 ,  H10N30/2047 ,  H10N30/87 ,  H10N30/88 ,  H10N30/082 ,  B41J2/1607 ,  B41J2/164

Abstract: An inkjet printing head includes a piezoelectric element that includes a lower electrode disposed on a movable film, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, a hydrogen barrier film that covers, in a front surface of the piezoelectric element, at least, entireties of side surfaces of the upper electrode, the piezoelectric film, and the lower electrode, at least a part of an upper surface of the upper electrode, and an upper surface of the lower electrode, a first interlayer insulating film formed on a front surface other than an end surface of the hydrogen barrier film, a second interlayer insulating film formed so as to cover the end surface of the hydrogen barrier film and the first interlayer insulating film, and a wiring that is formed on the second interlayer insulating film and that is connected to the piezoelectric element.

公开(公告)号：US20150214259A1

公开(公告)日：2015-07-30

申请号：US14659673

申请日：2015-03-17

Applicant: ROHM CO., LTD.

Inventor： Takamitsu YAMANAKA ,  Goro NAKATANI ,  Osamu MATSUSHIMA ,  Kenichi MIYAZAKI

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/1461 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%.

Abstract translation: 根据本发明的光电转换器包括绝缘层，相互间隔并设置在绝缘层上的多个下电极，由黄铜矿化合物半导体制成并形成为一起覆盖多个下电极的光吸收层， 以及形成为覆盖光吸收层的透明导电膜。 由此消除了由于光吸收层的蚀刻引起的影响（损伤）的像素之间的灵敏度的变化，并且可以使像素开口率为100％。

公开(公告)号：US20130341694A1

公开(公告)日：2013-12-26

申请号：US13918042

申请日：2013-06-14

Applicant: ROHM Co., Ltd.

Inventor： Takuji MAEKAWA ,  Osamu MATSUSHIMA ,  Toshihisa MAEDA

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L31/02164 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.

Abstract translation: 根据本发明的光电转换器包括基板，布置在基板上的下电极层，布置在下电极层上以覆盖下电极层并划分成多个像素的黄铜矿结构的化合物半导体层， 配置在化合物半导体层上的透明电极层，以及配置在化合物半导体层上的各像素周围的屏蔽层。