公开(公告)号：US20240079262A1

公开(公告)日：2024-03-07

申请号：US18507113

申请日：2023-11-13

申请人： ROHM CO., LTD. ,  LAPIS Semiconductor Co., Ltd.

发明人： Hajime USHIO ,  Yuta MAKINO ,  Hirofumi SHIRAGASAWA

IPC分类号： H01L21/683 ,  H01L21/04 ,  H01L21/304 ,  H01L21/67

CPC分类号： H01L21/6838 ,  H01L21/0445 ,  H01L21/304 ,  H01L21/67017

摘要： A support stage includes a base portion, a support portion that is erected at a peripheral edge portion of the base portion and with which one surface of a wafer is to be come into contact, a suction groove that is provided at the support portion and to which a suction force with respect to the one surface is to be given, an ejecting hole that is provided in an inward portion of the base portion and by which a gas is to be ejected toward the one surface, and an exhaust hole that is provided in at least either one of the base portion and the support portion and by which a gas is to be discharged from a space between the base portion, the support portion, and the one surface.