公开(公告)号：US20110241114A1

公开(公告)日：2011-10-06

申请号：US12753486

申请日：2010-04-02

申请人： RU-YI SU ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker-Hsiao Huo ,  Chia-Chin Shen ,  Eric Huang ,  Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Hsiao-Chin Tuan

发明人： RU-YI SU ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker-Hsiao Huo ,  Chia-Chin Shen ,  Eric Huang ,  Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Hsiao-Chin Tuan

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816

摘要： A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS) and a method of making it are provided in this disclosure. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. One portion of the second well surrounds the source and the other portion of the second well extends laterally from the first portion in the first well.

摘要翻译： 在本公开中提供了高电压金属氧化物半导体横向扩散装置（HV LDMOS）及其制造方法。 该器件包括半导体衬底，形成在衬底上的栅极结构，在栅极结构的任一侧上的衬底中形成的源极和漏极，在衬底中形成的第一掺杂阱和形成在第一衬底中的第二掺杂阱 好。 第二井的一部分围绕源，第二井的另一部分从第一井的第一部分横向延伸。

公开(公告)号：US07514754B2

公开(公告)日：2009-04-07

申请号：US11624698

申请日：2007-01-19

申请人： Shih-Kuei Ma ,  Chung-Yeh Lee ,  Chun-Ying Yeh ,  Ker-Hsiao Huo

发明人： Shih-Kuei Ma ,  Chung-Yeh Lee ,  Chun-Ying Yeh ,  Ker-Hsiao Huo

IPC分类号： H01L27/092

CPC分类号： H01L21/823892 ,  H01L27/0922

摘要： A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a second buried layer. The first and second epitaxial layers are disposed sequentially on the substrate. The first sinker and the first buried layer define a first area from the first and the second epitaxial layers. The second sinker and the second buried layer define a second area from the second epitaxial layer in the first area. An active device is disposed in the second area. The first buried layer is disposed between the first area and the substrate, and is connected to the first sinker. The second buried layer is disposed between the second area and the first epitaxial layer, and is connected to the second sinker.

摘要翻译： 提供半导体器件。 半导体器件包括衬底，第一外延层，第一沉降片，第一掩埋层，第二外延层，第二沉没片和第二掩埋层。 第一外延层和第二外延层依次设置在基板上。 第一沉降片和第一掩埋层限定了第一和第二外延层的第一区域。 第二沉降片和第二掩埋层在第一区域中限定了第二外延层的第二区域。 有源装置设置在第二区域中。 第一掩埋层设置在第一区域和衬底之间，并且连接到第一沉降片。 第二掩埋层设置在第二区域和第一外延层之间，并且连接到第二沉陷片。

公开(公告)号：US20080173951A1

公开(公告)日：2008-07-24

申请号：US11624698

申请日：2007-01-19

申请人： Shih-Kuei Ma ,  Chung-Yeh Lee ,  Chun-Ying Yeh ,  Ker-Hsiao Huo

发明人： Shih-Kuei Ma ,  Chung-Yeh Lee ,  Chun-Ying Yeh ,  Ker-Hsiao Huo

IPC分类号： H01L27/092

CPC分类号： H01L21/823892 ,  H01L27/0922

摘要： A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a second buried layer. The first and second epitaxial layers are disposed sequentially on the substrate. The first sinker and the first buried layer define a first area from the first and the second epitaxial layers. The second sinker and the second buried layer define a second area from the second epitaxial layer in the first area. An active device is disposed in the second area. The first buried layer is disposed between the first area and the substrate, and is connected to the first sinker. The second buried layer is disposed between the second area and the first epitaxial layer, and is connected to the second sinker.

摘要翻译： 提供半导体器件。 半导体器件包括衬底，第一外延层，第一沉降片，第一掩埋层，第二外延层，第二沉没片和第二掩埋层。 第一外延层和第二外延层依次设置在基板上。 第一沉降片和第一掩埋层限定了第一和第二外延层的第一区域。 第二沉降片和第二掩埋层在第一区域中限定了第二外延层的第二区域。 有源装置设置在第二区域中。 第一掩埋层设置在第一区域和衬底之间，并且连接到第一沉降片。 第二掩埋层设置在第二区域和第一外延层之间，并且连接到第二沉陷片。