公开(公告)号：US07217978B2

公开(公告)日：2007-05-15

申请号：US11038593

申请日：2005-01-19

申请人： Rajiv V. Joshi ,  Richard Andre Wachnik ,  Yue Tan ,  Kerry Bernstein

发明人： Rajiv V. Joshi ,  Richard Andre Wachnik ,  Yue Tan ,  Kerry Bernstein

IPC分类号： H01L27/01

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0207 ,  H01L27/1104

摘要： The present invention generally concerns fabrication methods and device architectures for use in memory circuits, and more particularly concerns hybrid silicon-on-insulator (SOI) and bulk architectures for use in memory circuits. Once aspect of the invention concerns CMOS SRAM cell architectures where at least one pair of adjacent NFETs in an SRAM cell have body regions linked by a leakage path diffusion region positioned beneath shallow source/drain diffusions, where the leakage path diffusion region extends from the bottom of the source/drain diffusion to the buried oxide layer, and at least one pair of NFETs from adjacent SRAM cells which have body regions linked by a similar leakage path diffusion region beneath adjacent source/drain diffusions. Another aspect of this invention concerns a microprocessor fabricated on an hybrid orientation substrate where the logic portion of the circuit has NFETs fabricated in (100) crystal orientation SOI silicon regions with floating body regions and PFETs fabricated in (110) crystal orientation bulk silicon regions; and where the SRAM memory portion has NFETs fabricated in (100) crystal orientation SOI silicon regions with body regions linked by leakage path diffusion regions beneath shallow source/drain diffusions and PFETs fabricated in (110) crystal orientation silicon regions.

摘要翻译： 本发明一般涉及用于存储器电路的制造方法和器件架构，更具体地说，涉及用于存储器电路的混合绝缘体上硅（SOI）和批量结构。 本发明的一个方面涉及SRAM SRAM单元结构，其中SRAM单元中的至少一对相邻NFET具有通过位于浅源/漏扩散之下的泄漏路径扩散区连接的体区，其中泄漏路径扩散区从底部延伸 源极/漏极扩散到掩埋氧化物层的至少一对NFET，以及来自相邻SRAM单元的至少一对NFET，其具有通过相邻的源极/漏极扩散附近的相似泄漏路径扩散区域连接的体区。 本发明的另一方面涉及一种制造在混合取向基板上的微处理器，其中该电路的逻辑部分具有在具有浮动体区域的（100）晶体取向SOI硅区域和在（110）晶体取向体硅区域中制造的PFET）制造的NFET。 并且其中SRAM存储器部分具有在（100）晶体取向SOI硅区域中制造的NFET，其中主体区域通过在（110）晶体取向硅区域中制造的浅源/漏扩散下的泄漏路径扩散区域和PFET连接。

公开(公告)号：US07768816B2

公开(公告)日：2010-08-03

申请号：US11952587

申请日：2007-12-07

申请人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

发明人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

IPC分类号： G11C11/00

CPC分类号： G11C11/412 ,  G11C11/413

摘要： A design structure embodied in a machine readable medium for use in a design process, the design structure representing a novel semiconductor SRAM cell structure that includes at least two pull-up transistors, two pull-down transistors, and two pass-gate transistors. In one embodiment, the SRAM cell is an 8T SRAM cell structure implements a series gating feature for implementing Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. Particularly, the 8-T approach adds two pass-gates, two series connected transistor devices connected at complementary nodes of two cross-coupled inverters, to control column select and row (word) select. In the other embodiment, the SRAM cell is a 9T SRAM cell structure includes a transmission gate to implement Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. The 9-T approach adds three transistors to perform ANDING function to separate the row select and column select signal functions.

摘要翻译： 体现在用于设计过程的机器可读介质中的设计结构，该设计结构表示包括至少两个上拉晶体管，两个下拉晶体管和两个通过栅极晶体管的新型半导体SRAM单元结构。 在一个实施例中，SRAM单元是8T SRAM单元结构，其实现具有增强的稳定性的用于实现列选择（CS）和行选择（WL）单元存储访问的串联门控特征。 特别地，8-T方法增加了两个传递门，两个串联的晶体管器件连接在两个交叉耦合的反相器的互补节点处，以控制列选择和行（字）选择。 在另一个实施例中，SRAM单元是9T SRAM单元结构，包括具有增强的稳定性的实现列选择（CS）和行选择（WL）单元存储访问的传输门。 9-T方法增加了三个晶体管来执行ANDING功能，以分离行选择和列选择信号功能。

公开(公告)号：US20090147560A1

公开(公告)日：2009-06-11

申请号：US11952587

申请日：2007-12-07

申请人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

发明人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

IPC分类号： G11C11/00

CPC分类号： G11C11/412 ,  G11C11/413

摘要： A design structure embodied in a machine readable medium for use in a design process, the design structure representing a novel semiconductor SRAM cell structure that includes at least two pull-up transistors, two pull-down transistors, and two pass-gate transistors. In one embodiment, the SRAM cell is an 8T SRAM cell structure implements a series gating feature for implementing Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. Particularly, the 8-T approach adds two pass-gates, two series connected transistor devices connected at complementary nodes of two cross-coupled inverters, to control column select and row (word) select. In the other embodiment, the SRAM cell is a 9T SRAM cell structure includes a transmission gate to implement Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. The 9-T approach adds three transistors to perform ANDING function to separate the row select and column select signal functions.

摘要翻译： 体现在用于设计过程的机器可读介质中的设计结构，该设计结构表示新颖的半导体SRAM单元结构，其包括至少两个上拉晶体管，两个下拉晶体管和两个通过栅极晶体管。 在一个实施例中，SRAM单元是8T SRAM单元结构，其实现具有增强的稳定性的用于实现列选择（CS）和行选择（WL）单元存储访问的串联门控特征。 特别地，8-T方法增加了两个传递门，两个串联的晶体管器件连接在两个交叉耦合的反相器的互补节点处，以控制列选择和行（字）选择。 在另一个实施例中，SRAM单元是9T SRAM单元结构，包括具有增强的稳定性的实现列选择（CS）和行选择（WL）单元存储访问的传输门。 9-T方法增加了三个晶体管来执行ANDING功能，以分离行选择和列选择信号功能。

公开(公告)号：US20070274140A1

公开(公告)日：2007-11-29

申请号：US11420049

申请日：2006-05-24

申请人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

发明人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

IPC分类号： G11C7/00

CPC分类号： G11C7/02 ,  G11C11/412 ,  H01L27/11 ,  H01L27/1104

摘要： The present invention relates to a novel semiconductor SRAM cell structure that includes at least two pull-up transistors, two pull-down transistors, and two pass-gate transistors. In one embodiment, an 8T SRAM cell structure implements a series gating feature for implementing Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. Particularly, the 8-T approach adds two pass-gates, two series connected transistor devices connected at complementary nodes of two cross-coupled inverters, to control column select and row (word) select. In the other embodiment, a 9T SRAM cell structure includes a transmission gate to implement Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. The 9-T approach adds three transistors to perform ANDING function to separate the row select and column select signal functions. Both methods improve stability by eliminating half-select mode and facilitate rail to rail data transfer in and out of the SRAM cell without disturbing the other cells.

摘要翻译： 本发明涉及一种新颖的半导体SRAM单元结构，其包括至少两个上拉晶体管，两个下拉晶体管和两个通过栅极晶体管。 在一个实施例中，8T SRAM单元结构实现了用于实现具有增强的稳定性的列选择（CS）和行选择（WL）单元存储访问的串行门控特征。 特别地，8-T方法增加了两个传递门，两个串联的晶体管器件连接在两个交叉耦合的反相器的互补节点处，以控制列选择和行（字）选择。 在另一实施例中，9T SRAM单元结构包括具有增强的稳定性的实现列选择（CS）和行选择（WL）单元存储访问的传输门。 9-T方法增加了三个晶体管来执行ANDING功能，以分离行选择和列选择信号功能。 这两种方法通过消除半选择模式提高稳定性，并有助于轨至轨数据传输进出SRAM单元，而不会干扰其他单元。

公开(公告)号：US07355906B2

公开(公告)日：2008-04-08

申请号：US11420049

申请日：2006-05-24

申请人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

发明人： Rajiv V. Joshi ,  Yue Tan ,  Robert C. Wong

IPC分类号： G11C7/00

CPC分类号： G11C7/02 ,  G11C11/412 ,  H01L27/11 ,  H01L27/1104

摘要： A novel semiconductor SRAM cell structure that includes at least two pull-up transistors, two pull-down transistors, and two pass-gate transistors. In one embodiment, an 8T SRAM cell structure implements a series gating feature for implementing Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. Particularly, the 8-T approach adds two pass-gates, two series connected transistor devices connected at complementary nodes of two cross-coupled inverters, to control column select and row (word) select. In the other embodiment, a 9T SRAM cell structure includes a transmission gate to implement Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. The 9-T approach adds three transistors to perform ANDING function to separate the row select and column select signal functions. Both methods improve stability by eliminating half-select mode and facilitate rail to rail data transfer in and out of the SRAM cell without disturbing the other cells.

摘要翻译： 一种新颖的半导体SRAM单元结构，其包括至少两个上拉晶体管，两个下拉晶体管和两个通过栅极晶体管。 在一个实施例中，8T SRAM单元结构实现了用于实现具有增强的稳定性的列选择（CS）和行选择（WL）单元存储访问的串行门控特征。 特别地，8-T方法增加了两个传递门，两个串联的晶体管器件连接在两个交叉耦合的反相器的互补节点处，以控制列选择和行（字）选择。 在另一实施例中，9T SRAM单元结构包括具有增强的稳定性的实现列选择（CS）和行选择（WL）单元存储访问的传输门。 9-T方法增加了三个晶体管来执行ANDING功能，以分离行选择和列选择信号功能。 这两种方法通过消除半选择模式提高稳定性，并有助于轨至轨数据传输进出SRAM单元，而不会干扰其他单元。

公开(公告)号：US08767501B2

公开(公告)日：2014-07-01

申请号：US13550762

申请日：2012-07-17

申请人： Rajiv V. Joshi ,  Ajay N. Bhoj

发明人： Rajiv V. Joshi ,  Ajay N. Bhoj

IPC分类号： G11C8/10

CPC分类号： G06F12/0864 ,  G06F2212/1021 ,  G11C15/04

摘要： Associative index extended (AIX) caches can be functionally implemented through a reconfigurable decoder that employs programmable line decoding. The reconfigurable decoder features scalability in the number of lines, the number of index extension bits, and the number of banks. The reconfigurable decoder can switch between pure direct mapped (DM) mode and direct mapped-associative index extended (DM-AIX) mode of operation. For banked configurations, the reconfigurable decoder provides the ability to run some banks in DM mode and some other banks in DM-AIX mode. A cache employing this reconfigurable decoder can provide a comparable level of latency as a DM cache with minimal modifications to a DM cache circuitry of an additional logic circuit on a critical signal path, while providing low power operation at low area overhead with SA cache-like miss rates. Address masking and most-recently-used-save replacement policy can be employed with a single bit overhead per line.

摘要翻译： 关联索引扩展（AIX）缓存可以通过采用可编程线解码的可重构解码器进行功能实现。 可重配置解码器具有线路数量的可扩展性，索引扩展位的数量和存储体的数量。 可重构解码器可以在纯直接映射（DM）模式和直接映射关联索引扩展（DM-AIX）操作模式之间切换。 对于组合配置，可重构解码器能够以DM模式运行某些存储区，并以DM-AIX模式运行其他存储区。 采用该可重构解码器的高速缓存器可以提供与DM高速缓存相当的延迟水平，对关键信号路径上的附加逻辑电路的DM高速缓存电路进行最小修改，同时在低区域开销提供具有SA缓存类似的低功率操作 错过率。 地址掩码和最近使用的保存替换策略可以采用每行一个位开销。

公开(公告)号：US08578316B1

公开(公告)日：2013-11-05

申请号：US13607678

申请日：2012-09-08

申请人： Rajiv V. Joshi ,  Ajay N. Bhoj

发明人： Rajiv V. Joshi ,  Ajay N. Bhoj

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F17/5018

摘要： A method of automatically generating structure files employing a full structure generator automated program is provided. An annotated device layout file is generated from a design layout by annotating the codes for design shapes with additional text representing the functionality of a physical structure associated with each design shape. Functioning individual semiconductor devices are identified from the annotated device layout file, and a circuit area including multiple interconnected semiconductor devices are identified. A front-end-of-line (FEOL) device structure file and a back-end-of-line (BEOL) device structure file are generated from layer by layer analysis of the components of the annotated device layout within the circuit area. Finite element meshes (FEMs) are generated for the FEOL and BEOL structure files and merged to provide a structure file that can be employed for simulation of semiconductor devices therein.

公开(公告)号：US20130289965A1

公开(公告)日：2013-10-31

申请号：US13457722

申请日：2012-04-27

申请人： Rajiv V. Joshi ,  Rouwaida N. Kanj ,  Keunwoo Kim

发明人： Rajiv V. Joshi ,  Rouwaida N. Kanj ,  Keunwoo Kim

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F2217/10

摘要： A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.

公开(公告)号：US20130289948A1

公开(公告)日：2013-10-31

申请号：US13611359

申请日：2012-09-12

申请人： Rajiv V. Joshi ,  Rouwaida N. Kanj ,  Keunwoo Kim

发明人： Rajiv V. Joshi ,  Rouwaida N. Kanj ,  Keunwoo Kim

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F2217/10

摘要： A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.

摘要翻译： 一种用于分析电路的方法包括识别完整设备结构中的一个或多个设备区域。 设备区域提供要分析的感兴趣区域。 生成代表性地包括一个或多个设备区域的部分设备。 通过采用整个装置结构的物理特性来减少部分装置的分析网格。 使用处理器来模拟部分设备，以获得代表整个设备结构的感兴趣区域中的设备输出信息。 还披露了系统。

公开(公告)号：US20130042217A1

公开(公告)日：2013-02-14

申请号：US13205186

申请日：2011-08-08

申请人： Fook-Luen HENG ,  Rajiv V. Joshi ,  Alexey Y. Lvov ,  Xiaoping Tang

发明人： Fook-Luen HENG ,  Rajiv V. Joshi ,  Alexey Y. Lvov ,  Xiaoping Tang

IPC分类号： G06F17/50

CPC分类号： G06F17/5068

摘要： Methods and systems for migrating circuit layouts. A floorplan layout is built for a target circuit using a subset of constraints that characterize a layout structure of an original circuit. Shape-constraint-based scaling is used on the floorplan layout by scaling parts of the floorplan layout in accordance with a plurality of different scaling ratios such that portions of the floorplan layout are concurrently scaled with the plurality of different scaling ratios. Cells are placed at locations defined by the floorplan layout. The floorplan layout is checked with shape-constraint-based legalization using all of the constraints to produce a migrated layout.

摘要翻译： 迁移电路布局的方法和系统。 使用表征原始电路的布局结构的约束子集为目标电路构建平面图布局。 通过根据多个不同的缩放比例缩放平面图布局的部分，使得平面图布局的部分与多个不同的缩放比同时缩放，从而在平面图布局上使用基于形状约束的缩放。 细胞被放置在由平面图布局定义的位置处。 使用所有约束来生成迁移的布局，使用基于形状约束的合法化来检查平面图布局。