Failover methods and systems in three-dimensional memory device

    公开(公告)号:US12287712B2

    公开(公告)日:2025-04-29

    申请号:US18059900

    申请日:2022-11-29

    Applicant: Rambus Inc.

    Abstract: Described are memory systems and devices in which each memory die in a three-dimensional stack of memory dies includes drive and receive circuitry that can communicate data signals from the stack on behalf of all the memory dies in the stack. The drive and receive circuitry, if defective on one device in the stack, can be disabled and substituted with the drive and receive circuitry from another. The stack of memory dies can thus function despite a failure of drive or receive circuitry in one or more of the memory dies. Each memory die includes test circuitry to detect defective drive and receive circuitry.

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