RF devices with enhanced performance and methods of forming the same

    公开(公告)号:US12125825B2

    公开(公告)日:2024-10-22

    申请号:US16678619

    申请日:2019-11-08

    申请人: Qorvo US, Inc.

    IPC分类号: H01L25/065 H01L25/00

    摘要: The present disclosure relates to a radio frequency device that includes a transfer device die and a multilayer redistribution structure underneath the transfer device die. The transfer device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion and a transfer substrate. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. A top surface of the device region is planarized. The transfer substrate including a porous silicon (PSi) region resides over the top surface of the device region. Herein, the PSi region has a porosity between 1% and 80%. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the transfer device die.