Multiple patterning layout decomposition for ease of conflict removal
    1.
    发明授权
    Multiple patterning layout decomposition for ease of conflict removal 有权
    多重图案化布局分解,便于冲突删除

    公开(公告)号:US08516403B2

    公开(公告)日:2013-08-20

    申请号:US13223844

    申请日:2011-09-01

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5068

    摘要: A mechanism is provided for multiple patterning lithography with conflict removal aware coloring. The mechanism makes multiple patterning coloring aware of the conflict removal overhead. The coloring solution explicitly considers ease of conflict removal as one of the coloring objectives. The mechanism pre-computes how much shapes can move in each direction. The mechanism generates a conflict graph where nodes represent shapes in the layout and edges represent conflicts between shapes. The mechanism assigns weights to edges based on available spatial slack between conflicting features. The mechanism then uses the weights to guide multiple patterning coloring. The mechanism prioritizes conflicting features with higher weights to be assigned different colors.

    摘要翻译: 提供了一种用于具有冲突消除意识着色的多重图案化光刻的机构。 该机制使得多个图案化着色意识到冲突移除开销。 着色解决方案明确地将冲突移除的容易性作为着色目标之一。 该机制预先计算出每个方向上可以移动多少形状。 该机制生成一个冲突图,其中节点表示布局中的形状,边缘表示形状之间的冲突。 该机制基于冲突特征之间的可用空间松弛来为边缘分配权重。 该机构然后使用重量来引导多个图案化着色。 该机制优先处理具有较高权重的冲突特征,以分配不同的颜色。

    MASK ASSIGNMENT FOR MULTIPLE PATTERNING LITHOGRAPHY
    2.
    发明申请
    MASK ASSIGNMENT FOR MULTIPLE PATTERNING LITHOGRAPHY 有权
    多功能拼图的掩蔽分配

    公开(公告)号:US20130061185A1

    公开(公告)日:2013-03-07

    申请号:US13223706

    申请日:2011-09-01

    IPC分类号: G06F17/50

    摘要: A mechanism is provided for mask assignment for triple patterning lithography. The mechanism identifies tip-to-tip (TT), tip-to-side (TS), and side-to-side (SS) conflicting parts by design rule dependent projection. The mechanism finds stitch location for TT, TS, and SS conflicts separately. The mechanism colors TT, TS, and SS conflicting parts with mask0/mask1, mask0/mask2, mask1/mask2 coloring cycle with each type colored separately. The mechanism uses existing infrastructure of two-way coloring. As a first objective, the mechanism attempts to minimize conflicts. As a second objective, the mechanism attempts to minimize the number of stitches by assigning the two sides of stitches to the same mask. Once coloring of all conflicting parts is done, the mechanism colors non-conflicting parts to maximize minimum overlap of exposures and to use both colors if two sides are different colors and one color if both sides are the same color.

    摘要翻译: 提供了用于三重图案化光刻的掩模分配的机构。 该机制通过设计规则相关的投影来识别尖端到尖端(TT),尖端到侧面(TS)以及侧向(SS)冲突部分。 该机制分别查找TT,TS和SS冲突的针脚位置。 机制颜色TT,TS和SS冲突部分与mask0 / mask1,mask0 / mask2,mask1 / mask2着色循环,每种类型分别着色。 该机制使用现有的双向着色基础设施。 作为第一个目标,该机制试图尽量减少冲突。 作为第二个目的,该机构通过将针脚的两侧分配到相同的面罩来尝试最小化线迹数。 一旦完成所有冲突部分的着色,该机制将颜色非冲突部分,以最大化曝光的最小重叠,并且如果双面是不同的颜色,则使用两种颜色,如果两面是相同颜色,则使用一种颜色。

    Mask assignment for multiple patterning lithography
    3.
    发明授权
    Mask assignment for multiple patterning lithography 有权
    多重图案平版印刷的掩模分配

    公开(公告)号:US08434033B2

    公开(公告)日:2013-04-30

    申请号:US13223706

    申请日:2011-09-01

    IPC分类号: G06F17/50

    摘要: A mechanism is provided for mask assignment for triple patterning lithography. The mechanism identifies tip-to-tip (TT), tip-to-side (TS), and side-to-side (SS) conflicting parts by design rule dependent projection. The mechanism finds stitch location for TT, TS, and SS conflicts separately. The mechanism colors TT, TS, and SS conflicting parts with mask0/mask1, mask0/mask2, mask1/mask2 coloring cycle with each type colored separately. The mechanism uses existing infrastructure of two-way coloring. As a first objective, the mechanism attempts to minimize conflicts. As a second objective, the mechanism attempts to minimize the number of stitches by assigning the two sides of stitches to the same mask. Once coloring of all conflicting parts is done, the mechanism colors non-conflicting parts to maximize minimum overlap of exposures and to use both colors if two sides are different colors and one color if both sides are the same color.

    摘要翻译: 提供了用于三重图案化光刻的掩模分配的机构。 该机制通过设计规则相关的投影来识别尖端到尖端(TT),尖端到侧面(TS)以及侧向(SS)冲突部分。 该机制分别查找TT,TS和SS冲突的针脚位置。 机制颜色TT,TS和SS冲突部分与mask0 / mask1,mask0 / mask2,mask1 / mask2着色循环,每种类型分别着色。 该机制使用现有的双向着色基础设施。 作为第一个目标,该机制试图尽量减少冲突。 作为第二个目的,该机构通过将针脚的两侧分配到相同的面罩来尝试最小化线迹数。 一旦完成所有冲突部分的着色,该机制将颜色非冲突部分,以最大化曝光的最小重叠,并且如果双面是不同的颜色,则使用两种颜色,如果两面是相同颜色,则使用一种颜色。

    Multiple Patterning Layout Decomposition for Ease of Conflict Removal
    4.
    发明申请
    Multiple Patterning Layout Decomposition for Ease of Conflict Removal 有权
    多种图案化布局分解,易于冲突移除

    公开(公告)号:US20130061183A1

    公开(公告)日:2013-03-07

    申请号:US13223844

    申请日:2011-09-01

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5068

    摘要: A mechanism is provided for multiple patterning lithography with conflict removal aware coloring. The mechanism makes multiple patterning coloring aware of the conflict removal overhead. The coloring solution explicitly considers ease of conflict removal as one of the coloring objectives. The mechanism pre-computes how much shapes can move in each direction, The mechanism generates a conflict graph where nodes represent shapes in the layout and edges represent conflicts between shapes. The mechanism assigns weights to edges based on available spatial slack between conflicting features, The mechanism then uses the weights to guide multiple patterning coloring. The mechanism prioritizes conflicting features with higher weights to be assigned different colors.

    摘要翻译: 提供了一种用于具有冲突消除意识着色的多重图案化光刻的机构。 该机制使得多个图案化着色意识到冲突移除开销。 着色解决方案明确地将冲突移除的容易性作为着色目标之一。 该机制预先计算出每个方向可以移动多少形状。机制生成一个冲突图,其中节点表示布局中的形状,边缘表示形状之间的冲突。 该机制基于冲突特征之间可用的空间松弛来为边缘分配权重。然后,机构使用权重来引导多个图案化着色。 该机制优先处理具有较高权重的冲突特征,以分配不同的颜色。

    Resolving double patterning conflicts
    5.
    发明授权
    Resolving double patterning conflicts 有权
    解决双重图案冲突

    公开(公告)号:US08359556B1

    公开(公告)日:2013-01-22

    申请号:US13171530

    申请日:2011-06-29

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A mechanism is provided for resolving patterning conflicts. The mechanism performs decomposition with stitches at all candidate locations to find the solution with the minimum number of conflicts. The mechanism then defines interactions between a layout of a first mask and a layout of a second mask through design rules, as well as interactions of mask1/mask2 with top and bottom layers (i.e., contacts, vial, etc.). The mechanism then gives the decomposed layout and design rule definition to any existing design rule fixing or layout compaction tool to solve native conflicts. The modified design rules are that same-layer spacing equals spacing of single patterning, different-layer spacing equals spacing of final layout, and layer overlap equals minimum overlap length.

    摘要翻译: 提供了解决图案化冲突的机制。 该机制用所有候选位置的针迹进行分解,以最小冲突次数找到解决方案。 该机制然后通过设计规则定义第一掩模的布局和第二掩模的布局之间的相互作用,以及mask1 / mask2与顶层和底层(即,触点,小瓶等)的相互作用。 然后,该机制将分解的布局和设计规则定义提供给任何现有的设计规则修复或布局压缩工具来解决本机冲突。 修改后的设计规则是同层间距等于单一图案间距,不同层间距等于最终布局间距,层重叠等于最小重叠长度。

    RESOLVING DOUBLE PATTERNING CONFLICTS
    6.
    发明申请
    RESOLVING DOUBLE PATTERNING CONFLICTS 有权
    解决双重文字冲突

    公开(公告)号:US20130007674A1

    公开(公告)日:2013-01-03

    申请号:US13171530

    申请日:2011-06-29

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A mechanism is provided for resolving patterning conflicts. The mechanism performs decomposition with stitches at all candidate locations to find the solution with the minimum number of conflicts. The mechanism then defines interactions between a layout of a first mask and a layout of a second mask through design rules, as well as interactions of mask1/mask2 with top and bottom layers (i.e., contacts, vial, etc.). The mechanism then gives the decomposed layout and design rule definition to any existing design rule fixing or layout compaction tool to solve native conflicts. The modified design rules are that same-layer spacing equals spacing of single patterning, different-layer spacing equals spacing of final layout, and layer overlap equals minimum overlap length.

    摘要翻译: 提供了解决图案化冲突的机制。 该机制用所有候选位置的针迹进行分解,以最小冲突次数找到解决方案。 该机制然后通过设计规则定义第一掩模的布局和第二掩模的布局之间的相互作用,以及mask1 / mask2与顶层和底层(即,触点,小瓶等)的相互作用。 然后,该机制将分解的布局和设计规则定义提供给任何现有的设计规则修复或布局压缩工具来解决本机冲突。 修改的设计规则是同层间距等于单一图案的间距,不同层间距等于最终布局的间距,层重叠等于最小重叠长度。