公开(公告)号：US20120168957A1

公开(公告)日：2012-07-05

申请号：US12981519

申请日：2010-12-30

申请人： Ravi Prakash SRIVASTAVA ,  Oluwafemi O. OGUNSOLA ,  Craig CHILD ,  Muhammed Shafi Kurikka Valappil PALLACHALIL ,  Habib HICHRI ,  Matthew ANGYAL ,  Hideshi MIYAJIMA

发明人： Ravi Prakash SRIVASTAVA ,  Oluwafemi O. OGUNSOLA ,  Craig CHILD ,  Muhammed Shafi Kurikka Valappil PALLACHALIL ,  Habib HICHRI ,  Matthew ANGYAL ,  Hideshi MIYAJIMA

IPC分类号： H01L23/48 ,  H01L21/31 ,  H01L21/28

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1036 ,  H01L2221/1063

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供用具有第一和第二区域的电介质层制备的衬底。 第一区域包括宽的特征，第二区域包括狭窄的特征。 在宽和窄特征的底部之间存在深度增量。 在基板上形成非保形层，并且在第一和第二区域中对宽且窄的沟槽进行排列。 去除非保形层。 去除非保形层减少了第一和第二区域中宽和窄特征的底部之间的深度增量。