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公开(公告)号:US20230369736A1
公开(公告)日:2023-11-16
申请号:US17743400
申请日:2022-05-12
Applicant: Raytheon BBN Technologies, Corp.
Inventor: Moe D. Soltani , Ian Moore , Ken Dinndorf
CPC classification number: H01P7/10 , H01P11/008
Abstract: A microwave resonator device including a first resonator member comprised of a dielectric material and a second resonator member comprised of a dielectric material. The second resonator member can be positioned spatially offset from the first resonator member to define a spatial interaction region configured to confine an electromagnetic field in a microwave region of the electromagnetic spectrum. The spatial offset between the first resonator member and the second resonator member defining the spatial interaction region is less than the microwave wavelength associated with a resonant frequency of the microwave resonator device. The microwave resonator device facilitates generation of a resonant field enhancement within the spatial interaction region.
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公开(公告)号:US12074359B2
公开(公告)日:2024-08-27
申请号:US17743400
申请日:2022-05-12
Applicant: Raytheon BBN Technologies, Corp.
Inventor: Moe D. Soltani , Ian Moore , Ken Dinndorf
CPC classification number: H01P7/10 , G01R29/08 , H01P1/2084 , H01P11/007 , H01P11/008
Abstract: A microwave resonator device including a first resonator member comprised of a dielectric material and a second resonator member comprised of a dielectric material. The second resonator member can be positioned spatially offset from the first resonator member to define a spatial interaction region configured to confine an electromagnetic field in a microwave region of the electromagnetic spectrum. The spatial offset between the first resonator member and the second resonator member defining the spatial interaction region is less than the microwave wavelength associated with a resonant frequency of the microwave resonator device. The microwave resonator device facilitates generation of a resonant field enhancement within the spatial interaction region.
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