公开(公告)号：US20220262937A1

公开(公告)日：2022-08-18

申请号：US17666671

申请日：2022-02-08

Applicant: Raytheon Company

Inventor： John Andrew Logan ,  Brian Douglas Schultz ,  Maher Bishara Tahhan

IPC: H01L29/778 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) heterostructure includes a substrate; a N-polar channel layer; and a N-polar barrier layer positioned between the substrate and the channel layer, wherein the barrier layer comprises a rare-earth III-nitride material. The rare earth III-nitride material can be ScAlN.

公开(公告)号：US12278606B2

公开(公告)日：2025-04-15

申请号：US17321031

申请日：2021-05-14

Applicant: Raytheon Company

Inventor： John Andrew Logan ,  Brian Douglas Schultz ,  Theodore D. Kennedy

IPC: H03H9/02 ,  C23C14/18 ,  C23C14/28 ,  C30B23/02 ,  C30B29/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17

Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

公开(公告)号：US20220368302A1

公开(公告)日：2022-11-17

申请号：US17321031

申请日：2021-05-14

Applicant: Raytheon Company

Inventor： John Andrew Logan ,  Brian Douglas Schultz ,  Theodore D. Kennedy

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  C23C14/18 ,  C23C14/28 ,  C30B23/02 ,  C30B29/02

Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

公开(公告)号：US12301195B2

公开(公告)日：2025-05-13

申请号：US17321031

申请日：2021-05-14

Applicant: Raytheon Company

Inventor： John Andrew Logan ,  Brian Douglas Schultz ,  Theodore D. Kennedy

IPC: H03H9/02 ,  C23C14/18 ,  C23C14/28 ,  C30B23/02 ,  C30B29/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17

Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.