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公开(公告)号：US12278606B2
公开(公告)日：2025-04-15
申请号：US17321031
申请日：2021-05-14
Applicant: Raytheon Company
Inventor： John Andrew Logan , Brian Douglas Schultz , Theodore D. Kennedy
Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.
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公开(公告)号：US20220368302A1
公开(公告)日：2022-11-17
申请号：US17321031
申请日：2021-05-14
Applicant: Raytheon Company
Inventor： John Andrew Logan , Brian Douglas Schultz , Theodore D. Kennedy
Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.
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3.发明申请公开(公告)号：US20180286954A1
公开(公告)日：2018-10-04
申请号：US15472708
申请日：2017-03-29
Applicant: Raytheon Company
Inventor： Brian D. Schultz , Theodore D. Kennedy , Amanda Kerr , William E. Hoke
Abstract: A structure having: a nucleation layer; and a Group III-Nitride structure disposed on a surface of the nucleation layer, the Group III-Nitride structure comprising a plurality of pairs of stacked Group III-Nitride layers, each one of the pairs of layers having a lower layer having a 3D growth structure and each one of the upper one of the pairs of layers having a 2D growth structure. Each one of the lower layers at completion has a surface roughness greater than a surface roughness at completion of an upper one of the pair of layers. Interfaces between each one of the upper layers and each one of the lower layers of the plurality of pairs of stacked Group III-Nitride layers have crystallographic dislocation combinations and/or annihilations therein.
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公开(公告)号：US12301195B2
公开(公告)日：2025-05-13
申请号：US17321031
申请日：2021-05-14
Applicant: Raytheon Company
Inventor： John Andrew Logan , Brian Douglas Schultz , Theodore D. Kennedy
Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.
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