公开(公告)号：US08558226B2

公开(公告)日：2013-10-15

申请号：US13480980

申请日：2012-05-25

申请人： Toshihiko Iwasaka ,  Kazunori Inoue ,  Masaru Aoki ,  Reiko Noguchi

发明人： Toshihiko Iwasaka ,  Kazunori Inoue ,  Masaru Aoki ,  Reiko Noguchi

IPC分类号： H01L33/08

CPC分类号： H01L27/1255 ,  H01L27/1225 ,  H01L27/1288

摘要： Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

摘要翻译： 本发明提供一种薄膜晶体管，其具有设置在半导体膜上的与半导体膜接触的基板，源电极和漏电极的多个部分中的半导体膜，并且彼此间隔开;以及 栅极电极，其经由栅极绝缘膜设置在所述源极电极和所述漏极电极之间; 辅助电容电极，与半导体膜接触地设置在半导体膜上; 在下层具有半导体膜的源极线从源电极延伸; 从栅电极延伸的栅极线; 与漏电极电连接的像素电极; 以及在相邻像素中将辅助电容电极彼此电连接的辅助电容电极连接线。

公开(公告)号：US08624244B2

公开(公告)日：2014-01-07

申请号：US13346193

申请日：2012-01-09

申请人： Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

发明人： Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/12 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

公开(公告)号：US20120187393A1

公开(公告)日：2012-07-26

申请号：US13346193

申请日：2012-01-09

申请人： Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

发明人： Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。