公开(公告)号：US11799475B2

公开(公告)日：2023-10-24

申请号：US17940348

申请日：2022-09-08

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki Watanabe ,  Hideshi Shimo

IPC: G11C5/14 ,  H03K17/687 ,  H03K3/03 ,  G11C11/4074 ,  H01L27/092 ,  H03K19/20 ,  G05F3/20

CPC classification number: H03K17/6871 ,  G11C5/146 ,  G11C11/4074 ,  H03K3/0315 ,  G05F3/205 ,  H01L27/092 ,  H03K19/20

Abstract: A semiconductor device and a method for controlling body bias thereof capable of properly controlling body bias of a transistor even in a case where process variation occurs are provided. Operation speeds of ring oscillators ROSCn and ROSCp respectively change due to an influence of process variation at an NMOS transistor MN side and a PMOS transistor MP side. Speed/bias data represent a correspondence relationship between the operation speeds of the ring oscillators ROSCn and ROSCp and set values V1n and V1p of body biases VBN and VBP. A body bias controller receives speed values Sn and Sp measured for the ring oscillators ROSCn and ROSCp to which the body biases VBN and VBP based on default values are respectively applied, and obtains the set values V1n and V1p on the basis of the speed/bias data.