公开(公告)号：US08749064B2

公开(公告)日：2014-06-10

申请号：US13867733

申请日：2013-04-22

申请人： Renesas Electronics Corporation

发明人： Kazuyoshi Maekawa ,  Kenichi Mori

IPC分类号： H01L23/48

CPC分类号： H01L23/485 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76862 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained.

摘要翻译： 半导体器件包括层间绝缘膜，设置在层间绝缘膜中的底层线，覆盖层间绝缘膜的衬里膜，覆盖衬垫膜的层间绝缘膜。 底线具有较低的孔，衬里膜和层间绝缘膜具有与下孔连通的上孔，下孔的直径大于上孔。 半导体器件还包括设置在下孔内壁表面的导电膜，沿着上孔的内壁表面设置的阻挡金属和填充上孔和下孔的Cu膜。 导电膜含有与阻挡金属物质相同的物质。 因此可以获得高可靠性的半导体器件。