公开(公告)号：US20180205225A1

公开(公告)日：2018-07-19

申请号：US15918309

申请日：2018-03-12

Applicant: Renesas Electronics Corporation

Inventor： Masashi ARAKAWA ,  Tadashi FUKUI ,  Koji TAKAYANAGI

IPC: H02H9/04 ,  H01L27/02 ,  H02H9/00

CPC classification number: H02H9/044 ,  H01L27/0285 ,  H02H9/005

Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. Agate width of the second transistor is narrower than a gate width of the first transistor.

公开(公告)号：US20160094027A1

公开(公告)日：2016-03-31

申请号：US14865418

申请日：2015-09-25

Applicant: Renesas Electronics Corporation

Inventor： Masashi ARAKAWA ,  Tadashi FUKUI ,  Koji TAKAYANAGI

IPC: H02H9/04 ,  H02H9/00

CPC classification number: H02H9/044 ,  H01L27/0285 ,  H02H9/005

Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. Agate width of the second transistor is narrower than a gate width of the first transistor.

Abstract translation: 提供了可以在保持ESD电阻的同时促进面积减小的半导体器件。 半导体器件包括电源线，接地线和设置在电源线和接地线之间的保护电路，以便应对静电放电。 保护电路包括第一晶体管，第一电阻元件，第二晶体管，第一电容元件，第一反相器和保护晶体管。 第二晶体管的玛瑙宽度窄于第一晶体管的栅极宽度。