公开(公告)号：US20180211949A1

公开(公告)日：2018-07-26

申请号：US15858242

申请日：2017-12-29

Applicant: Renesas Electronics Corporation

Inventor： Yoshihito UZAWA ,  Yasuyuki MORISHITA ,  Masanori TANAKA

IPC: H01L27/02 ,  H01L27/06

CPC classification number: H01L27/027 ,  H01L27/0255 ,  H01L27/0277 ,  H01L27/0288 ,  H01L27/0629

Abstract: A semiconductor device includes a MOS transistor which is coupled between two terminals and discharges current which flows caused by generation of static electricity and a diode which is coupled between a back gate of the MOS transistor and one of the terminal and has a polarity which is reversed to the polarity of a parasitic diode which is formed between the back gate and a source of the MOS transistor.