公开(公告)号：US20210080330A1

公开(公告)日：2021-03-18

申请号：US17009849

申请日：2020-09-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kan TAKEUCHI ,  Yoshio TAKAZAWA ,  Fumio TSUCHIYA ,  Daisuke OSHIDA ,  Naoya OTA ,  Masaki SHIMADA ,  Shinya KONISHI

IPC: G01K1/02 ,  H02P29/68 ,  G01K7/01 ,  G08C17/02

Abstract: A semiconductor device according to an embodiment includes a holding circuit including a buffer configured to obtain a heat stress information having a temperature dependency every predetermined period and a stress counter configured to accumulate the heat stress information and hold the accumulated value as a cumulative stress count value, a control circuit including an operation determination threshold value, and a wireless communication circuit. According to the semiconductor device according to the embodiment, while reducing the power consumption, it is possible to wirelessly transmit the cumulative heat stress information.

公开(公告)号：US20170187358A1

公开(公告)日：2017-06-29

申请号：US15367019

申请日：2016-12-01

Applicant: Renesas Electronics Corporation

Inventor： Kan TAKEUCHI ,  Masaki SHIMADA ,  Takeshi OKAGAKI ,  Yoshio TAKAZAWA

IPC: H03K3/03 ,  H03K5/159 ,  H03K3/011

CPC classification number: H03K3/0315 ,  G01R31/2856 ,  G01R31/31725 ,  H03K3/011 ,  H03K5/159

Abstract: There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.