SiC SUBSTRATE AND SiC INGOT
    1.
    发明公开

    公开(公告)号:US20230392286A1

    公开(公告)日:2023-12-07

    申请号:US18115346

    申请日:2023-02-28

    IPC分类号: C30B29/36 C01B32/956

    摘要: In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 mΩ·cm or less, and a region other than a high nitrogen concentration region called a facet is included.

    SiC SUBSTRATE AND SiC INGOT
    3.
    发明公开

    公开(公告)号:US20230391627A1

    公开(公告)日:2023-12-07

    申请号:US18175934

    申请日:2023-02-28

    IPC分类号: C01B32/956

    摘要: In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm−1 or less.