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公开(公告)号：US20120300363A1
公开(公告)日：2012-11-29
申请号：US13567317
申请日：2012-08-06
IPC分类号： H01G4/12
CPC分类号： H01G9/15 , H01G9/0032 , H01G9/052 , H01G9/055 , Y10T29/435
摘要： A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
摘要翻译： 大容量电容器包括由金属箔形成的第一电极和形成在金属箔上的半导体多孔陶瓷体。 例如通过氧化在多孔陶瓷体上形成电介质层。 导电介质沉积在填充多孔陶瓷体的孔隙并形成第二电极的多孔陶瓷体上。 然后电容器可以用各种层封装，并且可以包括常规的电终端。 制造大容量电容器的方法包括在由金属箔形成的第一电极上形成导电多孔陶瓷体，氧化以形成电介质层，并用导电介质填充多孔体以形成第二电极。 也可以在金属箔和多孔陶瓷体之间设置薄的半导体陶瓷层。
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公开(公告)号：US08238076B2
公开(公告)日：2012-08-07
申请号：US12553508
申请日：2009-09-03
IPC分类号： H01G4/00
CPC分类号： H01G9/15 , H01G9/0032 , H01G9/052 , H01G9/055 , Y10T29/435
摘要： A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
摘要翻译： 大容量电容器包括由金属箔形成的第一电极和形成在金属箔上的半导体多孔陶瓷体。 例如通过氧化在多孔陶瓷体上形成电介质层。 导电介质沉积在填充多孔陶瓷体的孔隙并形成第二电极的多孔陶瓷体上。 然后电容器可以用各种层封装，并且可以包括常规的电终端。 制造大容量电容器的方法包括在由金属箔形成的第一电极上形成导电多孔陶瓷体，氧化以形成电介质层，并用导电介质填充多孔体以形成第二电极。 也可以在金属箔和多孔陶瓷体之间设置薄的半导体陶瓷层。
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公开(公告)号：US20100073846A1
公开(公告)日：2010-03-25
申请号：US12553508
申请日：2009-09-03
CPC分类号： H01G9/15 , H01G9/0032 , H01G9/052 , H01G9/055 , Y10T29/435
摘要： A bulk capacitor includes a first electrode formed of a metal foil and a semi-conductive porous ceramic body formed on the metal foil. A dielectric layer is formed on the porous ceramic body for example by oxidation. A conductive medium is deposited on the porous ceramic body filling the pores of the porous ceramic body and forming a second electrode. The capacitor can then be encapsulated with various layers and can include conventional electrical terminations. A method of manufacturing a bulk capacitor includes forming a conductive porous ceramic body on a first electrode formed of a metal foil, oxidizing to form a dielectric layer and filling the porous body with a conductive medium to form a second electrode. A thin semi-conductive ceramic layer can also be disposed between the metal foil and the porous ceramic body.
摘要翻译： 大容量电容器包括由金属箔形成的第一电极和形成在金属箔上的半导体多孔陶瓷体。 例如通过氧化在多孔陶瓷体上形成电介质层。 导电介质沉积在填充多孔陶瓷体的孔隙并形成第二电极的多孔陶瓷体上。 然后电容器可以用各种层封装，并且可以包括常规的电终端。 制造大容量电容器的方法包括在由金属箔形成的第一电极上形成导电多孔陶瓷体，氧化以形成电介质层，并用导电介质填充多孔体以形成第二电极。 也可以在金属箔和多孔陶瓷体之间设置薄的半导体陶瓷层。
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公开(公告)号：US07907090B2
公开(公告)日：2011-03-15
申请号：US11759523
申请日：2007-06-07
申请人： Eli Bershadsky , Marina Kravchik , Reuven Katraro , David Ben-Bassat , Dani Alon
发明人： Eli Bershadsky , Marina Kravchik , Reuven Katraro , David Ben-Bassat , Dani Alon
IPC分类号： H01Q1/24
CPC分类号： C04B35/47 , C04B2235/3208 , C04B2235/3215 , C04B2235/3229 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3262 , C04B2235/3284 , C04B2235/3298 , C04B2235/349 , C04B2235/36 , C04B2235/656 , C04B2235/72
摘要： A dielectric ceramic composition has a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz. The dielectric ceramic composition may be formed by sintering by firing in air without a controlled atmosphere. The dielectric ceramic composition may have a major component of 92.49 to 97.5 wt. % containing 60.15 to 68.2 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate; and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide. UHF antennas and monolithic ceramic components may use the dielectric ceramic composition.
摘要翻译： 介电陶瓷组合物的介电常数K至少为200，介电损耗DF在1MHz时为0.0006以下。 电介质陶瓷组合物可以通过在没有受控气氛的空气中烧制而烧结而形成。 介电陶瓷组合物可以具有92.49至97.5重量％的主要组分。 ％含有60.15〜68.2重量％ ％钛酸锶，11.02〜23.59重量％ 钛酸钙和7.11〜21.32重量％ ％钛酸钡; 和2.50〜7.51重量％的次要组分。 ％含有1.18〜3.55重量％ 锆酸钙，0.50〜1.54重量％ 三氧化二铋，0.2〜0.59重量％ ％氧化锆，0.02〜0.07重量％ ％二氧化锰，0.12〜0.35wt。 ％氧化锌，0.12〜0.35重量％ ％无铅玻璃料，0.24至0.71wt。 ％的高岭土和0.12〜0.35wt。 ％的氧化铈。 UHF天线和单片陶瓷组件可以使用介电陶瓷组合物。
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