公开(公告)号：US4033027A

公开(公告)日：1977-07-05

申请号：US617036

申请日：1975-09-26

申请人： Richard Barton Fair ,  John Saylor Hayes ,  William Morgan Rosser

发明人： Richard Barton Fair ,  John Saylor Hayes ,  William Morgan Rosser

IPC分类号： C30B33/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  B01J17/00

CPC分类号： H01L21/78 ,  C30B33/00 ,  H01L21/3043 ,  Y10T225/12

摘要： A process for fabricating semiconductor devices is disclosed. In particular, a method for separating semiconductor wafers into device chips includes the step of forming a photoresist grid pattern underlying the metallization layer on the back face of the wafer. Mechanical means, such as scribing or sawing, are used to penetrate the metal layer, the underlying photoresist layer, and at least a portion of the semiconductor body. Separation then is completed either by breaking, further sawing or etching. The process enables a clean separation to be made through fairly heavy gold or gold alloy coatings which is particularly advantageous for devices which are to be eutectic-bonded to mounting platforms.

摘要翻译： 公开了半导体器件的制造工艺。 特别地，用于将半导体晶片分离成器件芯片的方法包括在晶片的背面上形成金属化层下方的光刻胶栅格图案的步骤。 使用诸如划线或锯切的机械装置来穿透金属层，下面的光致抗蚀剂层以及半导体本体的至少一部分。 然后通过断裂，进一步锯切或蚀刻完成分离。 该方法能够通过相当重的金或金合金涂层进行干净的分离，这对于将要共晶粘合到安装平台的装置是特别有利的。