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公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
摘要： A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
摘要翻译： 衬底加载子系统从外部源接收衬底并将其传送到输入端口。 基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。 在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。
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公开(公告)号：US5435682A
公开(公告)日：1995-07-25
申请号：US255114
申请日：1994-06-07
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括特殊的装载和卸载子系统，用于将要处理的基板放置到系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5156521A
公开(公告)日：1992-10-20
申请号：US720750
申请日：1991-06-25
摘要： A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 一种将基板装载到接收室中的方法，所述定位平台与所述接收室处于密封关系中，所述定位平台允许在将所加载的基板运送到进料室之前清洗所述接收室。 平台从接收室定位到进料室中以卸载基板。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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公开(公告)号：US5092728A
公开(公告)日：1992-03-03
申请号：US315332
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
摘要： Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 每个基板在可定位的平台上被装载到接收室中，该平台与接收室处于密封关系，以便在将所加载的基底运送到进料室之前清洗接收室。 平台从接收室定位到进料室中，从而将基板卸载。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5080549A
公开(公告)日：1992-01-14
申请号：US547463
申请日：1990-07-02
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.
摘要翻译： 在伯努利原理下操作的晶片处理设备用于拾取，运输和沉积晶片，该装置包括具有多个横向定向的出口的板，以及用于以足以形成低压环境的气体排出气体的中心出口 同时将晶片浸泡在径向流出的气体中，以防止在悬浮液中颗粒物质的晶片上的侵入和沉积。
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公开(公告)号：US5324155A
公开(公告)日：1994-06-28
申请号：US819098
申请日：1992-01-09
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683 , B65H5/08
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto. The outlets are slanted for substantially radially outwardly directing a flow of gas away from the pattern and over the top surface of the water for creating an area of relatively low pressure between the bottom surface of the lower pick-up plate and the top surface of the wafer (with respect to the pressure existing beneath the wafer) for picking up or lifting the wafer without physical contact between the wafer and the wand in the actual pick-up by utilizing Bernoulli's Principle.
摘要翻译： 一种改进的晶片处理系统，包括一对机器人臂，每个机械臂具有可操作地联接到其后端部分的驱动装置，用于伸出，缩回和可旋转地定位机器人手臂。 机器人手臂的相对端可操作地连接到拾取棒。 拾取棒包括顶板和底板。 顶板的下表面具有多个共同连接的凹槽，其中存储有用于从机器人臂的前端部分向所述凹槽提供气体的储存器。 多个气体出口设置在底板中，并且顶板的底表面牢固地定位在底板的顶表面上并与底板的顶表面齐平，使得至少一个凹槽位于多个气体中的每一个上 用于输送气体的出口。 出口被倾斜以基本上径向向外引导气体流离开图案并在水的顶部表面上，以在下部拾取板的底表面和下部拾取板的顶部表面之间产生相对较低压力的区域 晶片（相对于存在于晶片下方的压力），用于通过利用伯努利原理在实际拾取中拾取或提升晶片而不会在晶片和棒之间的物理接触。
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公开(公告)号：US5997588A
公开(公告)日：1999-12-07
申请号：US729550
申请日：1996-10-11
IPC分类号： H01L21/00 , H01L21/677 , H01L21/68 , B65G49/07
CPC分类号： H01L21/67126 , F16K51/02 , H01L21/67742 , H01L21/67748 , Y10S414/139 , Y10S414/141 , Y10S438/908 , Y10S438/941 , Y10T29/41
摘要： A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen. The Bernoulli wand passes through the gas curtain before entering the processing chamber to remove any fugitive particles, moisture and unwanted gases. An exhaust located proximate to an input/output chamber creates a continuous pressure gradient in the handling chamber toward the input/output chamber further helping to prevent unwanted gases from entering the processing chamber.
摘要翻译： 一种与半导体处理系统一起使用以防止不需要的气体进入处理室的气幕。 气幕包括邻近进入处理室的输送口的隔离阀周围的向上和向下的气体流。 在阀打开位置，向下的流动在阀和输送口之间延伸，并且向上的流沿隔离阀的相反方向延伸。 在阀关闭位置，其中一个流动延伸通过隔离阀中的槽，而另一个流在隔离阀的后侧上以相反的方向被引导。 在使用气幕装置的方法中，在伯努利主体上操作的拾取棒使用在处理室中不需要的气体，并且在将晶片装入处理室之前，在伯努利棒中的气流被切换 从第一气体到第二气体。 期望地，第二气体是氢气。 伯努利魔杖在进入处理室之前通过气帘，以除去任何流淌的颗粒，水分和不需要的气体。 位于输入/输出室附近的废气在处理室中朝向输入/输出室产生连续的压力梯度，进一步有助于防止不需要的气体进入处理室。
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公开(公告)号：US4874464A
公开(公告)日：1989-10-17
申请号：US167347
申请日：1988-03-14
IPC分类号： C30B25/02 , C30B25/10 , C30B29/06 , H01L21/205
CPC分类号： C30B29/06 , C30B25/10 , Y10S438/905
摘要： The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.
摘要翻译： 本发明涉及一种高通量单晶外延沉积工艺，其实现了晶片与晶片和晶圆表面之间的均匀性的提高。 提供了一种外延沉积工艺，其特征在于低水平冷却时间，其使沉积循环和循环间清洁之间的温度变化最小化，使得每个新晶片呈现基本相同的沉积环境。
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公开(公告)号：US06554905B1
公开(公告)日：2003-04-29
申请号：US09550680
申请日：2000-04-17
申请人： Dennis L. Goodwin
发明人： Dennis L. Goodwin
IPC分类号： H01L21000
CPC分类号： H01L21/67115 , Y10T29/41
摘要： A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.
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