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公开(公告)号：US4874464A
公开(公告)日：1989-10-17
申请号：US167347
申请日：1988-03-14
IPC分类号： C30B25/02 , C30B25/10 , C30B29/06 , H01L21/205
CPC分类号： C30B29/06 , C30B25/10 , Y10S438/905
摘要： The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.
摘要翻译： 本发明涉及一种高通量单晶外延沉积工艺，其实现了晶片与晶片和晶圆表面之间的均匀性的提高。 提供了一种外延沉积工艺，其特征在于低水平冷却时间，其使沉积循环和循环间清洁之间的温度变化最小化，使得每个新晶片呈现基本相同的沉积环境。
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2.发明授权
公开(公告)号：US4798165A
公开(公告)日：1989-01-17
申请号：US147100
申请日：1988-01-25
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45508 , C23C16/45591 , C23C16/54 , C30B25/14
摘要： In a chemical vapor deposition chamber, an improved technique for providing deposition materials to the growth surface is described. The gas carrying deposition materials is constrained to have axial symmetry thereby providing a uniform deposition of materials on the substrate. The gas can be initially directed toward the substrate with a generally uniform perpendicular velocity. The gas can be introduced into the deposition chamber through a multiplicity of apertures and is extracted from the vicinity of the substrate in a manner to preserve the axial symmetry. The apparatus permits convenient control of the deposition process by varying the distance between apparatus introducing the gas carrying the deposition materials and the substrate. The flow of gas minimizes the problems arising from autodoping of the growth layer of material. The flow of gas and generally small size of the deposition chamber minimize particulate contamination of the growing film.
摘要翻译： 在化学气相沉积室中，描述了一种用于向生长表面提供沉积材料的改进技术。 携带气体的沉积材料被限制为具有轴对称性，从而提供材料在基底上的均匀沉积。 气体可以最初以大致均匀的垂直速度指向基板。 气体可以通过多个孔引入沉积室，并且以保持轴向对称的方式从基板附近提取。 该装置允许通过改变引入携带沉积材料的气体的设备与基底之间的距离来方便地控制沉积过程。 气体流动可最大限度地减少材料生长层自动掺杂所引起的问题。 气体的流动和沉积室的通常尺寸较小使得生长膜的微粒污染最小化。
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3.发明授权Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus 失效在轴向对称外延沉积设备中用于衬底加热的方法和装置
公开(公告)号：US4654509A
公开(公告)日：1987-03-31
申请号：US784739
申请日：1985-10-07
CPC分类号： C30B25/105
摘要： In an epitaxial deposition reactor with an axially symmetric gas flow carrying the deposition materials, apparatus and method for heating the substrate and associated susceptor uniformly is described. The apparatus includes at least one chamber having a plurality of heat lamps passing therethrough, the chamber being generally disposed symmetrically with respect to an axis of the substrate. The walls of the chamber are appropriately coated to reflect the light from the heat lamps and the outermost lamps can be energized to produce a higher temperature than the centrally located lamps to compensate for regions of the reactor that provide access to the substrate and therefore promote thermal losses. The spacing of the lamps can be varied also to compensate for thermal non-uniformity of the heating cavity. In a first embodiment, a lower chamber can be a chamber similar to the first chamber with the exception that the lamps are rotated 90.degree.. In a second embodiment, the lower chamber consists only of reflecting surfaces with no sources of heat generated therein. However, in this embodiment a portion of the lower chamber has a reflectivity different from the reflectivity of the remainder portion of the chamber. The substrate can be rotated to provide a further averaging of possible thermal structure. In a third embodiment, parabolic reflectors are associated with each lamp to provide greater uniformity in the radiation impinging on the substrate-susceptor combination. Chambers having heating lamps with both parabolic reflectors and with planar reflecting surfaces are also described.
摘要翻译： 在具有承载沉积材料的轴向对称气流的外延沉积反应器中，描述了均匀地加热衬底和相关联的基座的装置和方法。 该装置包括至少一个室，其具有穿过其中的多个加热灯，该室通常相对于基板的轴对称设置。 室的壁被适当地涂覆以反射来自加热灯的光，并且最外面的灯可以被激励以产生比中心位置的灯更高的温度，以补偿提供对基板的接近的反应器的区域，并且因此促进热 损失。 灯的间隔也可以改变以补偿加热腔的热不均匀性。 在第一实施例中，下室可以是类似于第一室的室，除了灯旋转90度。 在第二实施例中，下室仅由不产生热源的反射表面组成。 然而，在该实施例中，下室的一部分具有与腔室的其余部分的反射率不同的反射率。 可以旋转衬底以提供可能的热结构的进一步平均。 在第三实施例中，抛物面反射器与每个灯相关联，以在照射到衬底感受器组合上的辐射中提供更大的均匀性。 还描述了具有抛物面反射器和平面反射表面的加热灯的室。
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4.发明授权Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus 失效在轴向对称外延沉积设备中用于衬底加热的方法和装置
公开(公告)号：US4789771A
公开(公告)日：1988-12-06
申请号：US31519
申请日：1987-03-27
CPC分类号： C30B25/105
摘要： An apparatus and method for heating a substrate and associated rotatable susceptor in an epitaxial deposition reactor with an axially symmetric gas flow carrying deposition material include at least one chamber having a plurality of heat lamps. The chamber is generally symmetric with respect to an axis of the substrate. The chamber walls are coated to reflect light from the heat lamps. The outermost heat lamps can be energized to produce a higher temperature than the centrally located lamps to compensate for regions of the reactor which provide access to the substrate and, therefore, promote thermal losses. The spacing of the heat lamps may be varied to compensate for thermal non-uniformity of the heating cavity. The substrate may be rotated, on the rotatable susceptor, to average the thermal environment to which the substrate is exposed.
摘要翻译： 用于加热具有轴向对称气体流动沉积材料的外延沉积反应器中的衬底和相关联的可旋转感受器的装置和方法包括具有多个加热灯的至少一个腔室。 腔室通常相对于衬底的轴线对称。 室壁被涂覆以反射来自加热灯的光。 最外面的加热灯可以通电以产生比位于中心的灯更高的温度，以补偿反应器的提供对基板的通路并因此促进热损失的区域。 可以改变加热灯的间隔以补偿加热腔的热不均匀性。 衬底可以在可旋转的基座上旋转以平均衬底暴露于的热环境。
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公开(公告)号：US06960887B2
公开(公告)日：2005-11-01
申请号：US10359556
申请日：2003-02-07
IPC分类号： H01J37/32 , H01J7/24 , H01L21/302 , H05B31/26
CPC分类号： H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.
摘要翻译： 等离子体反应器或真空处理装置设置有孔板组件。 孔板组件包括上板和下板。 每个板配置有通孔。 上下孔板可独立地相对于彼此旋转。 板在真空室内布置有排放反应器，使得卡盘组件设置在孔板组件的开口内。 孔板组件进一步构造成具有与真空室的内壁形状基本匹配的周边形状。
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公开(公告)号：US06949722B2
公开(公告)日：2005-09-27
申请号：US10630783
申请日：2003-07-31
申请人： Eric J. Strang , Wayne L. Johnson
发明人： Eric J. Strang , Wayne L. Johnson
IPC分类号： H01L21/26 , H01L21/00 , H01L21/687 , H05B3/68
CPC分类号： H01L21/68757 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.
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公开(公告)号：US06819053B2
公开(公告)日：2004-11-16
申请号：US10419258
申请日：2003-04-21
申请人： Wayne L. Johnson
发明人： Wayne L. Johnson
IPC分类号： H01J724
CPC分类号： H01J27/146 , H01J27/16
摘要： A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.
摘要翻译： 高电流密度，低电压离子源包括真空室。 等离子体源在室内产生等离子体，或者将等离子体直接注入到室中。 磁场和电场协调以将离子从光束中的等离子体区域引导到衬底以由离子处理。 使用离子源的方法包括制造用于处理衬底的离子束。
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8.发明授权Structure and the method for measuring the spectral content of an electric field as a function of position inside a plasma 失效作为等离子体内的位置的函数的电场的光谱含量的测定结构和方法公开(公告)号：US06806650B2
公开(公告)日：2004-10-19
申请号：US10218090
申请日：2002-08-14
IPC分类号： H01J724
CPC分类号： H05H1/0081 , G01R19/0053 , G01R29/0878 , H05H1/0062
摘要： An RF electric field probe device for measuring an RF electric field intensity in a plasma. The device is composed essentially of an electric field sensing unit and an output unit. The electric field sensing unit is composed of a first electro-optical component positionable in the plasma and operable to modulate light as a function of variations of the RF electric field in the plasma at the fundamental frequency and harmonics of the RF electric field, and a first antenna unit electrically coupled to the first component for coupling the first component to the RF electric field. The output unit is coupled to the electric field sensing unit for providing an output signal containing information relating to the magnitude and frequency of the modulation which occurs in the first component. The probe device may be used to map a plasma region by moving the probe device to any selected point in the plasma region.
摘要翻译： 一种RF电场探针装置，用于测量等离子体中的RF电场强度。 该装置主要由电场感测单元和输出单元组成。 电场感测单元由可定位在等离子体中的第一电光部件组成，可用于根据射频电场的基频和谐波等离子体中的RF电场的变化来调制光，并且 电耦合到第一部件的第一天线单元，用于将第一部件耦合到RF电场。 输出单元耦合到电场感测单元，用于提供包含与发生在第一组件中的调制的幅度和频率有关的信息的输出信号。 探针装置可以用于通过将探针装置移动到等离子体区域中的任何选定点来映射等离子体区域。
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9.发明授权公开(公告)号：US06790487B2
公开(公告)日：2004-09-14
申请号：US10218029
申请日：2002-08-14
申请人： Wayne L. Johnson
发明人： Wayne L. Johnson
IPC分类号： C23C1428
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32165 , H05H1/46
摘要： A method and apparatus for generating a plasma having a selected electron temperature, by: generating electrical power having components at at least two different frequencies; deriving electromagnetic energy at the at least two different frequencies from the generated electrical power and inductively coupling the derived electromagnetic energy into a region containing an ionizable gas to ionize the gas and create a plasma composed of the resulting ions; and selecting a power level for the electrical power component at each frequency in order to cause the plasma to have the selected electron temperature.
摘要翻译： 一种通过以下方式产生具有所选电子温度的等离子体的方法和装置：产生具有至少两个不同频率的分量的电功率; 在所述至少两个不同频率处从所产生的电功率中导出电磁能量，并且将导出的电磁能感应耦合到包含可电离气体的区域中，以使气体离子化并产生由所得离子组成的等离子体; 并且为了使等离子体具有所选择的电子温度，在每个频率处选择功率分量的功率电平。
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公开(公告)号：US06767698B2
公开(公告)日：2004-07-27
申请号：US10204263
申请日：2002-08-20
申请人： Wayne L. Johnson
发明人： Wayne L. Johnson
IPC分类号： G03F742
CPC分类号： H01L21/31138 , C23C16/4586 , C23C16/46 , H01J2237/3342
摘要： A method and system (100) for the stripping of photoresist layers using an electrostatically shielded RF (ESRF) plasma for the reduction of a crust and then the removal of the softened photoresist in an ESRF plasma. By varying the temperature during the two steps the method and system further provides the processing parameters for the needs of the stripping reaction.
摘要翻译： 一种用于使用静电屏蔽RF（ESRF）等离子体剥离光致抗蚀剂层以减少外壳然后在ESRF等离子体中去除软化的光致抗蚀剂的方法和系统（100）。 通过在两个步骤期间改变温度，方法和系统进一步提供了汽提反应需要的处理参数。
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