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公开(公告)号：US5997588A
公开(公告)日：1999-12-07
申请号：US729550
申请日：1996-10-11
IPC分类号： H01L21/00 , H01L21/677 , H01L21/68 , B65G49/07
CPC分类号： H01L21/67126 , F16K51/02 , H01L21/67742 , H01L21/67748 , Y10S414/139 , Y10S414/141 , Y10S438/908 , Y10S438/941 , Y10T29/41
摘要： A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen. The Bernoulli wand passes through the gas curtain before entering the processing chamber to remove any fugitive particles, moisture and unwanted gases. An exhaust located proximate to an input/output chamber creates a continuous pressure gradient in the handling chamber toward the input/output chamber further helping to prevent unwanted gases from entering the processing chamber.
摘要翻译： 一种与半导体处理系统一起使用以防止不需要的气体进入处理室的气幕。 气幕包括邻近进入处理室的输送口的隔离阀周围的向上和向下的气体流。 在阀打开位置，向下的流动在阀和输送口之间延伸，并且向上的流沿隔离阀的相反方向延伸。 在阀关闭位置，其中一个流动延伸通过隔离阀中的槽，而另一个流在隔离阀的后侧上以相反的方向被引导。 在使用气幕装置的方法中，在伯努利主体上操作的拾取棒使用在处理室中不需要的气体，并且在将晶片装入处理室之前，在伯努利棒中的气流被切换 从第一气体到第二气体。 期望地，第二气体是氢气。 伯努利魔杖在进入处理室之前通过气帘，以除去任何流淌的颗粒，水分和不需要的气体。 位于输入/输出室附近的废气在处理室中朝向输入/输出室产生连续的压力梯度，进一步有助于防止不需要的气体进入处理室。
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公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
摘要： A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
摘要翻译： 衬底加载子系统从外部源接收衬底并将其传送到输入端口。 基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。 在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。
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公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5435682A
公开(公告)日：1995-07-25
申请号：US255114
申请日：1994-06-07
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括特殊的装载和卸载子系统，用于将要处理的基板放置到系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5156521A
公开(公告)日：1992-10-20
申请号：US720750
申请日：1991-06-25
摘要： A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 一种将基板装载到接收室中的方法，所述定位平台与所述接收室处于密封关系中，所述定位平台允许在将所加载的基板运送到进料室之前清洗所述接收室。 平台从接收室定位到进料室中以卸载基板。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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公开(公告)号：US5092728A
公开(公告)日：1992-03-03
申请号：US315332
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
摘要： Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 每个基板在可定位的平台上被装载到接收室中，该平台与接收室处于密封关系，以便在将所加载的基底运送到进料室之前清洗接收室。 平台从接收室定位到进料室中，从而将基板卸载。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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公开(公告)号：US4874464A
公开(公告)日：1989-10-17
申请号：US167347
申请日：1988-03-14
IPC分类号： C30B25/02 , C30B25/10 , C30B29/06 , H01L21/205
CPC分类号： C30B29/06 , C30B25/10 , Y10S438/905
摘要： The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.
摘要翻译： 本发明涉及一种高通量单晶外延沉积工艺，其实现了晶片与晶片和晶圆表面之间的均匀性的提高。 提供了一种外延沉积工艺，其特征在于低水平冷却时间，其使沉积循环和循环间清洁之间的温度变化最小化，使得每个新晶片呈现基本相同的沉积环境。
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公开(公告)号：US06093252A
公开(公告)日：2000-07-25
申请号：US637616
申请日：1996-04-25
申请人： John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
发明人： John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
IPC分类号： B01J3/00 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/48 , H01L21/00 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： B01J3/006 , C23C16/44 , C23C16/455 , C23C16/45502 , C23C16/46 , C23C16/481 , H01L21/67115 , H01L21/68735 , H01L21/68785
摘要： An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.
摘要翻译： 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。
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公开(公告)号：US5823295A
公开(公告)日：1998-10-20
申请号：US624151
申请日：1996-03-29
CPC分类号： F16N7/385 , F16N29/02 , F16N2230/10 , F16N2250/04
摘要： A control system for lubricating a work machine is provided. The control system includes a lubricant distribution system, a charging system adapted to drive the lubricant distribution system, a sensor for determining the operating state of the charging system, and a device for calculating a time interval being dependent upon a previous lubricating event. The control also includes a device for producing a lubrication signal in response to the time interval reaching a predetermined interval constant.
摘要翻译： 提供了一种润滑作业机械的控制系统。 控制系统包括润滑剂分配系统，适于驱动润滑剂分配系统的充电系统，用于确定充电系统的运行状态的传感器，以及用于根据先前润滑事件来计算时间间隔的装置。 该控制还包括响应于达到预定间隔常数的时间间隔产生润滑信号的装置。
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公开(公告)号：US5511457A
公开(公告)日：1996-04-30
申请号：US334724
申请日：1994-11-04
摘要： A steering control system for an autonomous machine has a manual steering control valve for directing fluid from a pump to either a head end chamber or a rod end chamber of a hydraulic steering actuator. In one embodiment, an electrically actuated steering valve device is disposed in series flow relationship between the pump and the manual steering control valve and is operative to direct fluid from the pump to the head end and rod end chambers. In another embodiment, a electrically actuated device mechanically actuates the manual steering control valve for steering the machine.
摘要翻译： 用于自主机器的转向控制系统具有用于将流体从泵引导到液压转向致动器的头端室或杆端室的手动转向控制阀。 在一个实施例中，电动转向阀装置在泵和手动转向控制阀之间以串联流动关系布置，并且可操作以将流体从泵引导到头端和杆端室。 在另一个实施例中，电致动装置机械地致动用于转向机器的手动转向控制阀。
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