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    Gas barrier layer for metallic and nonmetallic materials
    1.
    发明授权
    Gas barrier layer for metallic and nonmetallic materials 失效
    用于金属和非金属材料的气体阻隔层

    公开(公告)号：US4950551A

    公开(公告)日：1990-08-21

    申请号：US250946

    申请日：1988-09-29

    申请人： Richard Doetzer ,  Georg Iwantscheff

    发明人： Richard Doetzer ,  Georg Iwantscheff

    IPC分类号： C03C25/10 ,  C25D3/44 ,  C25D3/66 ,  C25D5/56 ,  C25D7/00 ,  F16L58/08 ,  G21C3/07 ,  H01B1/02

    CPC分类号： C25D5/56 ,  C25D3/44 ,  F16L58/08 ,  G21C3/07 ,  G21Y2002/10 ,  G21Y2002/201 ,  G21Y2002/206 ,  G21Y2004/10 ,  G21Y2004/40 ,  Y02E30/40 ,  Y10T428/12556 ,  Y10T428/12597 ,  Y10T428/12736

    摘要： The invention provides a high-purity electroaluminum layer having a purity of greater than 99.99% and, preferably, a thickness of 10 to 20 .mu.m which serves as a gas barrier layer, particularly for hydrogen, oxygen, tritium and water vapor, for metallic materials and nonmetallic materials such as glass, quartz, ceramic and cermets with an electroconductive surface as well as for conductive plastics. By post-treatment, the electroaluminum layer can be compacted. The electroaluminum layer is precipitated by electroplating from aprotic oxygen-free and anhydrous electrolyte media of the general formula M.sup.I X.2AlR.sub.3.nLsm, wherein M.sup.I is an alkali metal ion or a quaternary onium ion, X is a halogen ion, preferably F.sup.- or Cl.sup.-, R is an alkyl radical, preferably CH.sub.3, C.sub.2 H.sub.5, C.sub.3 H.sub.7 or C.sub.4 H.sub.9, Lsm is an aromatic solvent molecule, preferably toluene, ethyl benzene, xylene or a mixture thereof, and n=0 to 12, at a bath temperature of 50.degree. to 110.degree. C. and a current density of 0.5 to 10 A/dm.sup.2 under intensive bath agitation. Electroplating may be conducted in the presence of an aromatic solvent.

    摘要翻译： 本发明提供纯度大于99.99％，优选厚度为10至20μm的高纯度电致铝层，其用作气体阻隔层，特别是用于氢，氧，氚和水蒸气的金属 材料和非金属材料如玻璃，石英，陶瓷和具有导电表面的金属陶瓷以及导电塑料。 通过后处理，电铝层可以被压实。 通过电解从非质子无氧和无水的通式MIX.2AlR3.nLsm的电解质介质沉淀电解铝层，其中MI是碱金属离子或季鎓离子，X是卤素离子，优选F-或Cl - ，R为烷基，优选为CH3，C2H5，C3H7或C4H9，Lsm为芳族溶剂分子，优选甲苯，乙苯，二甲苯或其混合物，n = 0至12，浴温为50℃ 至110℃，电流密度为0.5-10A / dm 2。 电镀可以在芳族溶剂的存在下进行。

    Ion barrier layer on metals and nonmetals
    2.
    发明授权
    Ion barrier layer on metals and nonmetals 失效
    金属和非金属上的离子阻挡层

    公开(公告)号：US4948475A

    公开(公告)日：1990-08-14

    申请号：US250947

    申请日：1988-09-29

    申请人： Richard Doetzer ,  Georg Iwantscheff

    发明人： Richard Doetzer ,  Georg Iwantscheff

    IPC分类号： C25D3/66 ,  C25D3/44 ,  C25D5/56 ,  C25D7/00 ,  H01B1/02

    CPC分类号： C25D3/44 ,  C25D5/56

    摘要： The invention provides an ion barrier formed of a high-purity electroplated aluminum layer (purity >99.99%) which preferably has a thickness of 10 to 20 .mu.m for use on structural parts and shapes of metals and nonmetals, in particular on polyolefins. If desired, the electroplated aluminum layer can be compacted and/or anodically oxidized by post-treatment. The electroplated aluminum layer prevents the intrusion of metal and nonmetal ions into nonmetals, particularly plastic (for example polyolefins), and their penetration to metal surfaces. The deposition of the electroplated aluminum layer occurs from aprotic, oxygen-free and anhydrous electrolyte media of the general formula M.sup.I X.2AlR.sub.3.nLsm, wherein M.sup.I is an alkali metal ion or a quaternary onium ion, X is a halogen ion, preferably F.sup.- or Cl.sup.-, R is an alkyl radical, preferably CH.sub.3, C.sub.2 H.sub.5, C.sub.3 H.sub.7 or C.sub.4 H.sub.9, Lsm is an aromatic solvent molecule, preferably toluene, ethyl benzene, xylene or a mixture thereof, and n=0 to 12, at a bath temperature of 50.degree. to 110.degree. C. and a current density of 0.5 to 10 A/dm.sup. 2 under intensive bath movement. The media may possibly be in the presence of an aromatic solvent.

    摘要翻译： 本发明提供了一种由高纯度电镀铝层（纯度> 99.99％）形成的离子屏障，优选厚度为10至20μm，用于金属和非金属，特别是聚烯烃的结构部件和形状。 如果需要，电镀铝层可以通过后处理压实和/或阳极氧化。 电镀铝层防止金属和非金属离子侵入非金属，特别是塑料（例如聚烯烃）中，并渗入金属表面。 电镀铝层的沉积是由通式MIX.2AlR3.nLsm的非质子，无氧和无水电解质介质发生的，其中MI是碱金属离子或季鎓离子，X是卤素离子，优选F- 或Cl-，R是烷基，优选CH 3，C 2 H 5，C 3 H 7或C 4 H 9，Lsm是芳族溶剂分子，优选甲苯，乙苯，二甲苯或其混合物，n = 0至12，浴浴温度 50℃至110℃，电流密度为0.5-10A / dm 2。 介质可能存在芳族溶剂。